Longitudinal magnetoresistance of ultrathin films and two-dimensional electron layers

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    A method of calculating the longitudinal magnetoresistance of ultrathin films or inversion layers in MOS structures with sufficient size quantisation of transverse electron motion is proposed within the framework of the theory of weak localisation. The cases when a single subband and several subbands of size quantisation are filled are discussed. It is shown that in all studied cases the magnetoresistance is negative and depends on the ratio H2/T, so that it can be distinguished experimentally from the H/T-dependences of electron-electron interaction corrections to conductivity. Extension of the obtained results to the magnetoresistance calculation of quasi-1D channel is also discussed.

    Original languageEnglish
    Article number009
    Pages (from-to)3797-3802
    Number of pages6
    JournalJournal of Physics: Condensed Matter
    Issue number16
    Publication statusPublished - 1990

    Research Beacons, Institutes and Platforms

    • National Graphene Institute


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