Low cost patterning of poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) films to increase organic photovoltaic device efficiency

J. B. Emah; R. J. Curry; S. R P Silva

doi:10.1063/1.2973342

Low cost patterning of poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) films to increase organic photovoltaic device efficiency

J. B. Emah, R. J. Curry, S. R P Silva

University of Surrey

Research output: Contribution to journal › Article › peer-review

Abstract

A low-cost lithographic technique to pattern poly(3,4- ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) films with 10 nm deep features of 700 nm periodicity is demonstrated. The use of these patterned films in poly (3-hexylthiophene): [6,6] -phenylC61 -butyric acid methyl ester organic photovoltaic devices leads to an increase in short circuit current (Jsc), fill factor, and power conversion efficiency (PCE) with only a slight reduction in open circuit voltage. Patterning the PEDOT:PSS at 150°C increases Jsc from 2.44 to 3.03 mA/ cm2 improving the PCE from 0.63% to 0.81% with similar increases due to patterning also being obtained at other temperatures.

Original language	English
Article number	103301
Journal	Applied Physics Letters
Volume	93
Issue number	10
DOIs	https://doi.org/10.1063/1.2973342
Publication status	Published - 2008

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@article{43dd57094a7146c9b7f0571c7244af55,

title = "Low cost patterning of poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) films to increase organic photovoltaic device efficiency",

abstract = "A low-cost lithographic technique to pattern poly(3,4- ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) films with 10 nm deep features of 700 nm periodicity is demonstrated. The use of these patterned films in poly (3-hexylthiophene): [6,6] -phenylC61 -butyric acid methyl ester organic photovoltaic devices leads to an increase in short circuit current (Jsc), fill factor, and power conversion efficiency (PCE) with only a slight reduction in open circuit voltage. Patterning the PEDOT:PSS at 150°C increases Jsc from 2.44 to 3.03 mA/ cm2 improving the PCE from 0.63% to 0.81% with similar increases due to patterning also being obtained at other temperatures.",

author = "Emah, {J. B.} and Curry, {R. J.} and Silva, {S. R P}",

year = "2008",

doi = "10.1063/1.2973342",

language = "English",

volume = "93",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "10",

}

TY - JOUR

T1 - Low cost patterning of poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) films to increase organic photovoltaic device efficiency

AU - Emah, J. B.

AU - Curry, R. J.

AU - Silva, S. R P

PY - 2008

Y1 - 2008

N2 - A low-cost lithographic technique to pattern poly(3,4- ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) films with 10 nm deep features of 700 nm periodicity is demonstrated. The use of these patterned films in poly (3-hexylthiophene): [6,6] -phenylC61 -butyric acid methyl ester organic photovoltaic devices leads to an increase in short circuit current (Jsc), fill factor, and power conversion efficiency (PCE) with only a slight reduction in open circuit voltage. Patterning the PEDOT:PSS at 150°C increases Jsc from 2.44 to 3.03 mA/ cm2 improving the PCE from 0.63% to 0.81% with similar increases due to patterning also being obtained at other temperatures.

AB - A low-cost lithographic technique to pattern poly(3,4- ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) films with 10 nm deep features of 700 nm periodicity is demonstrated. The use of these patterned films in poly (3-hexylthiophene): [6,6] -phenylC61 -butyric acid methyl ester organic photovoltaic devices leads to an increase in short circuit current (Jsc), fill factor, and power conversion efficiency (PCE) with only a slight reduction in open circuit voltage. Patterning the PEDOT:PSS at 150°C increases Jsc from 2.44 to 3.03 mA/ cm2 improving the PCE from 0.63% to 0.81% with similar increases due to patterning also being obtained at other temperatures.

UR - http://www.scopus.com/inward/record.url?scp=51749119441&partnerID=8YFLogxK

U2 - 10.1063/1.2973342

DO - 10.1063/1.2973342

M3 - Article

AN - SCOPUS:51749119441

SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

M1 - 103301

ER -

Low cost patterning of poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) films to increase organic photovoltaic device efficiency

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