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Abstract
Using electrolyte as the gate dielectric to form an electric double layer (EDL) is an effective method to reduce the operating voltage of thin-film transistors (TFTs). Such TFTs are typically able to work at a low voltage of 1 V. However, there has been very limited work on the low-frequency noise (LFN) properties of EDL TFTs despite that the nature of EDL means an accumulation of a large number of ions at the channel interface which may well play an important role in device electronic noise. Here, the LFN properties of amorphous indium–gallium–zinc-oxide (a-IGZO) EDL TFTs gated with sputtered SiO2-based electrolyte are characterized. The LFN in the EDL TFTs shows two distinctively different dependencies on frequency in different gate bias ranges, i.e., 1/f noise and 1/f2 noise. The 1/f noise generated at low gate voltages VG < 1 V is determined to be flicker noise which follows the carrier mobility fluctuation model. The 1/f2 noise generated at high gate voltages VG > 1 V, on the other hand, is found to be generation-recombination noise. Heat treatment, which reduces ions inside the electrolyte, leads to a dramatic reduction of the 1/f2 noise. Our work shows that the generation-recombination noise might be related to the moisture induced ions inside the sputtered SiO2-based electrolyte. A larger VG results in a deeper position of the generation-recombination centers at the dielectric/channel interface.
Original language | English |
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Pages (from-to) | 972 |
Number of pages | 976 |
Journal | ACS Applied Electronic Materials |
Volume | 1 |
DOIs | |
Publication status | Published - 15 Jun 2019 |
Keywords
- Electric double layer
- Thin-film transistor
- Low-frequency noise
- SiO2-based
- Electrolyte
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Dive into the research topics of 'Low-frequency noise in electric double layer InGaZnO thin-film transistors gated with sputtered SiO2-based electrolyte'. Together they form a unique fingerprint.Projects
- 1 Finished
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Nano-rectennas for heat-to-electricity conversion. Graphene
Song, A. (PI) & Hill, E. (CoI)
1/04/16 → 7/08/19
Project: Research