Low-frequency noise of a ballistic rectifier

Arun K. Singh; Shahrir R. Kasjoo; Aimin M. Song

doi:10.1109/TNANO.2014.2308593

Low-frequency noise of a ballistic rectifier

Arun K. Singh, Shahrir R. Kasjoo, Aimin M. Song

Research output: Contribution to journal › Article › peer-review

Abstract

A ballistic-electron transport-based semiconductor nanorectifier, also known as a ballistic rectifier, has been demonstrated to have an intrinsic zero threshold voltage. In this paper, we characterize its low-frequency noise properties and show that the zero-threshold property enables elimination of the flicker noise. As a potential terahertz detector, the ballistic rectifier exhibits a noise equivalent power in the range of commercially available, uncooled thermal terahertz detectors. The observed noise in the device at finite biases is modeled quantitatively. The derived simple formula reveals that the narrowest part of the electron channels has a dominant role in the device noise properties. © 2002-2012 IEEE.

Original language	English
Article number	6748967
Pages (from-to)	527-531
Number of pages	4
Journal	IEEE Transactions on Nanotechnology
Volume	13
Issue number	3
DOIs	https://doi.org/10.1109/TNANO.2014.2308593
Publication status	Published - 2014

Keywords

Ballistic rectifier
ballistic transport
low-frequency noise
microwave detector
terahertz

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10.1109/TNANO.2014.2308593

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title = "Low-frequency noise of a ballistic rectifier",

abstract = "A ballistic-electron transport-based semiconductor nanorectifier, also known as a ballistic rectifier, has been demonstrated to have an intrinsic zero threshold voltage. In this paper, we characterize its low-frequency noise properties and show that the zero-threshold property enables elimination of the flicker noise. As a potential terahertz detector, the ballistic rectifier exhibits a noise equivalent power in the range of commercially available, uncooled thermal terahertz detectors. The observed noise in the device at finite biases is modeled quantitatively. The derived simple formula reveals that the narrowest part of the electron channels has a dominant role in the device noise properties. {\textcopyright} 2002-2012 IEEE.",

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year = "2014",

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N2 - A ballistic-electron transport-based semiconductor nanorectifier, also known as a ballistic rectifier, has been demonstrated to have an intrinsic zero threshold voltage. In this paper, we characterize its low-frequency noise properties and show that the zero-threshold property enables elimination of the flicker noise. As a potential terahertz detector, the ballistic rectifier exhibits a noise equivalent power in the range of commercially available, uncooled thermal terahertz detectors. The observed noise in the device at finite biases is modeled quantitatively. The derived simple formula reveals that the narrowest part of the electron channels has a dominant role in the device noise properties. © 2002-2012 IEEE.

AB - A ballistic-electron transport-based semiconductor nanorectifier, also known as a ballistic rectifier, has been demonstrated to have an intrinsic zero threshold voltage. In this paper, we characterize its low-frequency noise properties and show that the zero-threshold property enables elimination of the flicker noise. As a potential terahertz detector, the ballistic rectifier exhibits a noise equivalent power in the range of commercially available, uncooled thermal terahertz detectors. The observed noise in the device at finite biases is modeled quantitatively. The derived simple formula reveals that the narrowest part of the electron channels has a dominant role in the device noise properties. © 2002-2012 IEEE.

KW - Ballistic rectifier

KW - ballistic transport

KW - low-frequency noise

KW - microwave detector

KW - terahertz

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EP - 531

JO - IEEE Transactions on Nanotechnology

JF - IEEE Transactions on Nanotechnology

IS - 3

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ER -

Low-frequency noise of a ballistic rectifier

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Keywords

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