TY - GEN
T1 - Low-frequency noise of an AlGaAs/GaAs-based self-switching diode
AU - Kasjoo, S.R.
AU - Singh, A.K.
AU - Song, A.M.
PY - 2015
Y1 - 2015
N2 - In this report, the low-frequency noise was studied at different electrical biases in an AlGaAs/GaAs-based self-switching diode (SSD), which currently has been demonstrated as a high speed detector up to terahertz frequencies. A typical Lorentzian-typed generation-recombination and 1/f noises were observed in the SSD array at room temperature. The behavior of 1/f noise in the device was in a good agreement with Hooge's mobility fluctuation theory.
AB - In this report, the low-frequency noise was studied at different electrical biases in an AlGaAs/GaAs-based self-switching diode (SSD), which currently has been demonstrated as a high speed detector up to terahertz frequencies. A typical Lorentzian-typed generation-recombination and 1/f noises were observed in the SSD array at room temperature. The behavior of 1/f noise in the device was in a good agreement with Hooge's mobility fluctuation theory.
UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-84962142335&partnerID=MN8TOARS
U2 - 10.1109/EDSSC.2015.7285188
DO - 10.1109/EDSSC.2015.7285188
M3 - Conference contribution
BT - Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015
ER -