Low-frequency noise of an AlGaAs/GaAs-based self-switching diode

S.R. Kasjoo; A.K. Singh; A.M. Song

doi:10.1109/EDSSC.2015.7285188

Low-frequency noise of an AlGaAs/GaAs-based self-switching diode

S.R. Kasjoo
, A.K. Singh
, A.M. Song

Research output: Chapter in Book/Conference proceeding › Conference contribution › peer-review

Abstract

In this report, the low-frequency noise was studied at different electrical biases in an AlGaAs/GaAs-based self-switching diode (SSD), which currently has been demonstrated as a high speed detector up to terahertz frequencies. A typical Lorentzian-typed generation-recombination and 1/f noises were observed in the SSD array at room temperature. The behavior of 1/f noise in the device was in a good agreement with Hooge's mobility fluctuation theory.

Original language	Undefined
Title of host publication	Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015
DOIs	https://doi.org/10.1109/EDSSC.2015.7285188
Publication status	Published - 2015

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@inproceedings{d6bc680de8ab4aed9a1c9a4afa4baa14,

title = "Low-frequency noise of an AlGaAs/GaAs-based self-switching diode",

abstract = "In this report, the low-frequency noise was studied at different electrical biases in an AlGaAs/GaAs-based self-switching diode (SSD), which currently has been demonstrated as a high speed detector up to terahertz frequencies. A typical Lorentzian-typed generation-recombination and 1/f noises were observed in the SSD array at room temperature. The behavior of 1/f noise in the device was in a good agreement with Hooge's mobility fluctuation theory.",

author = "S.R. Kasjoo and A.K. Singh and A.M. Song",

year = "2015",

doi = "10.1109/EDSSC.2015.7285188",

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booktitle = "Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015",

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T1 - Low-frequency noise of an AlGaAs/GaAs-based self-switching diode

AU - Kasjoo, S.R.

AU - Singh, A.K.

AU - Song, A.M.

PY - 2015

Y1 - 2015

N2 - In this report, the low-frequency noise was studied at different electrical biases in an AlGaAs/GaAs-based self-switching diode (SSD), which currently has been demonstrated as a high speed detector up to terahertz frequencies. A typical Lorentzian-typed generation-recombination and 1/f noises were observed in the SSD array at room temperature. The behavior of 1/f noise in the device was in a good agreement with Hooge's mobility fluctuation theory.

AB - In this report, the low-frequency noise was studied at different electrical biases in an AlGaAs/GaAs-based self-switching diode (SSD), which currently has been demonstrated as a high speed detector up to terahertz frequencies. A typical Lorentzian-typed generation-recombination and 1/f noises were observed in the SSD array at room temperature. The behavior of 1/f noise in the device was in a good agreement with Hooge's mobility fluctuation theory.

UR - https://www.scopus.com/pages/publications/84962142335

U2 - 10.1109/EDSSC.2015.7285188

DO - 10.1109/EDSSC.2015.7285188

M3 - Conference contribution

BT - Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015

ER -

Low-frequency noise of an AlGaAs/GaAs-based self-switching diode

Abstract

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