Low resistance ohmic contacts to millimetre-wave graded gap Gunn diode oscillators

S. Townsend, M. Missous, J. P.R. Stephens, M. Carr, N. Priestley

Research output: Contribution to conferencePaperpeer-review

Abstract

Low resistance ohmic contacts have been developed for state of the art graded gap Gunn diode oscillators for volume production of anti-collision/automatic cruise control car radar. Both alloyed and non-alloyed contact schemes have been investigated. We report one of lowest specific contact resistivities to date for a conventional alloyed AuGeNiAu on n+GaAs system and a non-alloyed TiAu on graded n InGaAs on n+GaAs, of 1.03(±0.7)×10-6 Ωcm-2 and 1.07(±0.5)×10-7 Ωcm-2 respectively, achieved by incorporating very highly doped, high quality MBE grown epitaxial contact layers. The non-spiking nature of the non-alloyed approach provides highly reproducible, consistently uniform resistivity ohmic contacts; an essential requirement for volume production processes where yield and reliability are important. For such applications we highlight certain ill effects attributed to the alloying process, illustrated measurements made on alloyed and non-alloyed GePd based contact systems.

Original languageEnglish
Pages237-242
Number of pages6
Publication statusPublished - 1 Dec 1997
EventProceedings of the 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO - London, UK
Duration: 24 Nov 199725 Nov 1997

Conference

ConferenceProceedings of the 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO
CityLondon, UK
Period24/11/9725/11/97

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