Low-temperature decay of photocapacitance caused by Sn-related DX centers in AlxGa1-xAs

K. Žd'Ánský; A. R. Peaker

doi:10.1063/1.108690

Low-temperature decay of photocapacitance caused by Sn-related DX centers in Al_xGa_1-xAs

K. Žd'Ánský, A. R. Peaker

EEE - Academic & Research

Czechoslovak Academy of Sciences

Research output: Contribution to journal › Article › peer-review

Abstract

Transients of capacitance and parallel conductance when illumination is switched off have been measured at various temperatures down to 25 K. It has been proved that the Sn-DX center is not an origin of persistent photocapacitance but the photocapacitance is only long lasting and decays with the temperature independent rate. It has been proposed that the decay is caused by quantum mechanical tunneling of the Sn donor with electron capture. Further, capacitance and conductance as a function of frequency were measured and the energy E_D=30 meV of the negative charge state and E_D=8 meV of the neutral charge state of the DX center were determined.

Original language	English
Pages (from-to)	1393-1395
Number of pages	3
Journal	Applied Physics Letters
Volume	62
Issue number	12
DOIs	https://doi.org/10.1063/1.108690
Publication status	Published - 1993

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abstract = "Transients of capacitance and parallel conductance when illumination is switched off have been measured at various temperatures down to 25 K. It has been proved that the Sn-DX center is not an origin of persistent photocapacitance but the photocapacitance is only long lasting and decays with the temperature independent rate. It has been proposed that the decay is caused by quantum mechanical tunneling of the Sn donor with electron capture. Further, capacitance and conductance as a function of frequency were measured and the energy ED=30 meV of the negative charge state and ED=8 meV of the neutral charge state of the DX center were determined.",

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N2 - Transients of capacitance and parallel conductance when illumination is switched off have been measured at various temperatures down to 25 K. It has been proved that the Sn-DX center is not an origin of persistent photocapacitance but the photocapacitance is only long lasting and decays with the temperature independent rate. It has been proposed that the decay is caused by quantum mechanical tunneling of the Sn donor with electron capture. Further, capacitance and conductance as a function of frequency were measured and the energy ED=30 meV of the negative charge state and ED=8 meV of the neutral charge state of the DX center were determined.

AB - Transients of capacitance and parallel conductance when illumination is switched off have been measured at various temperatures down to 25 K. It has been proved that the Sn-DX center is not an origin of persistent photocapacitance but the photocapacitance is only long lasting and decays with the temperature independent rate. It has been proposed that the decay is caused by quantum mechanical tunneling of the Sn donor with electron capture. Further, capacitance and conductance as a function of frequency were measured and the energy ED=30 meV of the negative charge state and ED=8 meV of the neutral charge state of the DX center were determined.

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ER -

Low-temperature decay of photocapacitance caused by Sn-related DX centers in Al_xGa_1-xAs

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