Low-temperature fabrication of layered self-organized ge clusters by RF-sputtering

Sara R C Pinto; Anabela G. Rolo; Maja Buljan; Adil Chahboun; Sigrid Bernstorff; Nuno P. Barradas; Eduardo Alves; Reza J. Kashtiban; Ursel Bangert; Maria J M Gomes

doi:10.1186/1556-276X-6-341

Low-temperature fabrication of layered self-organized ge clusters by RF-sputtering

Sara R C Pinto, Anabela G. Rolo, Maja Buljan, Adil Chahboun, Sigrid Bernstorff, Nuno P. Barradas, Eduardo Alves, Reza J. Kashtiban, Ursel Bangert, Maria J M Gomes

Research output: Contribution to journal › Article › peer-review

Abstract

In this article, we present an investigation of (Ge + SiO2)/SiO2 multilayers deposited by magnetron sputtering and subsequently annealed at different temperatures. The structural properties were investigated by transmission electron microscopy, grazing incidence small angles X-ray scattering, Rutherford backscattering spectrometry, Raman, and X-ray photoelectron spectroscopies. We show a formation of self-assembled Ge clusters during the deposition at 250°C. The clusters are ordered in a three-dimensional lattice, and they have very small sizes (about 3 nm) and narrow size distribution. The crystallization of the clusters was achieved at annealing temperature of 700°C. © 2011 Pinto et al.

Original language	English
Pages (from-to)	-7
Journal	Nanoscale Research Letters
Volume	6
Issue number	1
DOIs	https://doi.org/10.1186/1556-276X-6-341
Publication status	Published - Jan 2011

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10.1186/1556-276X-6-341

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@article{2c535af2d7614132b25211c31015a15a,

title = "Low-temperature fabrication of layered self-organized ge clusters by RF-sputtering",

abstract = "In this article, we present an investigation of (Ge + SiO2)/SiO2 multilayers deposited by magnetron sputtering and subsequently annealed at different temperatures. The structural properties were investigated by transmission electron microscopy, grazing incidence small angles X-ray scattering, Rutherford backscattering spectrometry, Raman, and X-ray photoelectron spectroscopies. We show a formation of self-assembled Ge clusters during the deposition at 250°C. The clusters are ordered in a three-dimensional lattice, and they have very small sizes (about 3 nm) and narrow size distribution. The crystallization of the clusters was achieved at annealing temperature of 700°C. {\textcopyright} 2011 Pinto et al.",

author = "Pinto, {Sara R C} and Rolo, {Anabela G.} and Maja Buljan and Adil Chahboun and Sigrid Bernstorff and Barradas, {Nuno P.} and Eduardo Alves and Kashtiban, {Reza J.} and Ursel Bangert and Gomes, {Maria J M}",

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month = jan,

doi = "10.1186/1556-276X-6-341",

language = "English",

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T1 - Low-temperature fabrication of layered self-organized ge clusters by RF-sputtering

AU - Pinto, Sara R C

AU - Rolo, Anabela G.

AU - Buljan, Maja

AU - Chahboun, Adil

AU - Bernstorff, Sigrid

AU - Barradas, Nuno P.

AU - Alves, Eduardo

AU - Kashtiban, Reza J.

AU - Bangert, Ursel

AU - Gomes, Maria J M

PY - 2011/1

Y1 - 2011/1

N2 - In this article, we present an investigation of (Ge + SiO2)/SiO2 multilayers deposited by magnetron sputtering and subsequently annealed at different temperatures. The structural properties were investigated by transmission electron microscopy, grazing incidence small angles X-ray scattering, Rutherford backscattering spectrometry, Raman, and X-ray photoelectron spectroscopies. We show a formation of self-assembled Ge clusters during the deposition at 250°C. The clusters are ordered in a three-dimensional lattice, and they have very small sizes (about 3 nm) and narrow size distribution. The crystallization of the clusters was achieved at annealing temperature of 700°C. © 2011 Pinto et al.

AB - In this article, we present an investigation of (Ge + SiO2)/SiO2 multilayers deposited by magnetron sputtering and subsequently annealed at different temperatures. The structural properties were investigated by transmission electron microscopy, grazing incidence small angles X-ray scattering, Rutherford backscattering spectrometry, Raman, and X-ray photoelectron spectroscopies. We show a formation of self-assembled Ge clusters during the deposition at 250°C. The clusters are ordered in a three-dimensional lattice, and they have very small sizes (about 3 nm) and narrow size distribution. The crystallization of the clusters was achieved at annealing temperature of 700°C. © 2011 Pinto et al.

U2 - 10.1186/1556-276X-6-341

DO - 10.1186/1556-276X-6-341

M3 - Article

SN - 1931-7573

VL - 6

SP - -7

JO - Nanoscale Research Letters

JF - Nanoscale Research Letters

IS - 1

ER -

Low-temperature fabrication of layered self-organized ge clusters by RF-sputtering

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