Low-temperature investigations of ion-induced amorphisation in silicon carbide nanowhiskers under helium irradiation

Engineering

• Low-Temperature 100%
• Critical Dose 100%
• Room Temperature 100%
• Transmissions 50%
• Radiation Effect 50%
• Free Surface 50%
• Model System 50%
• Comparative Analysis 50%
• Thin Foil 50%
• Induced Defect 50%
• Nanoporous Silicon 50%

Material Science

• Silicon Carbide 100%
• Amorphization 100%
• Crystalline Material 20%
• Nanoporous Material 20%
• Transmission Electron Microscopy 20%
• Radiation Damage 20%
• Amorphous Material 20%

Chemical Engineering

• Silicon Carbide 100%
• Nanowhiskers 100%