Skip to main navigation
Skip to search
Skip to main content
Research Explorer The University of Manchester Home
Home
Profiles
Research units
Research output
Projects
Impacts
Activities
Press/Media
Prizes
Equipment
Datasets
Student theses
Search by expertise, name or affiliation
Low-temperature molecular beam epitaxy of gallium arsenide
M. Missous
*
, K. E. Singer
*
Corresponding author for this work
EEE - Academic & Research
UMIST
Research output
:
Contribution to journal
›
Article
›
peer-review
Overview
Fingerprint
Fingerprint
Dive into the research topics of 'Low-temperature molecular beam epitaxy of gallium arsenide'. Together they form a unique fingerprint.
Sort by
Weight
Alphabetically
Engineering
Low-Temperature
100%
Gallium Arsenide
100%
Arsenic
33%
Growth Condition
33%
Deep Level
33%
Substrate Temperature
33%
Low Growth Temperature
33%
Chemistry
Gallium
100%
Molecular Beam Epitaxy
100%
Optical Property
50%
Electrical Property
50%
Liquid Film
50%
Physics
Molecular Beam Epitaxy
100%
Gallium Arsenide
100%
Optical Properties
50%
Electrical Properties
50%
Earth and Planetary Sciences
Gallium Arsenide
100%
Molecular Beam Epitaxy
100%
Optical Property
50%
Electrical Property
50%
Material Science
Molecular Beam Epitaxy
100%
Gallium Arsenide
100%
Film
33%
Arsenic
33%
Hall Mobility
33%