Low-Voltage, Flexible IGZO Transistors Gated by PSSNa Electrolyte

Lulu Du; Dandan He; Yaxuan Liu; Mingsheng Xu; Qingpu Wang; Qian Xin; Aimin Song

doi:10.1109/LED.2018.2862910

Low-Voltage, Flexible IGZO Transistors Gated by PSSNa Electrolyte

Lulu Du, Dandan He, Yaxuan Liu, Mingsheng Xu, Qingpu Wang, Qian Xin, Aimin Song

Research output: Contribution to journal › Article › peer-review

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Original language	English
Pages (from-to)	1334 - 1337
Journal	IEEE Electron Device Letters
Volume	39
Issue number	9
Early online date	3 Aug 2018
DOIs	https://doi.org/10.1109/LED.2018.2862910 https://doi.org/10.1109/LED.2018.2862910
Publication status	Published - Sept 2018

Keywords

Electric double layer transistors (EDLTs)
Carving, cutting, and flip-chip bonding (CCFB)
Flexible
Low operating voltages

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IEEE EDL_FINAL_VERSION_luluAccepted author manuscript, 878 KB

Nano-rectennas for heat-to-electricity conversion. Graphene
Song, A. (PI) & Hill, E. (CoI)
1/04/16 → 7/08/19
Project: Research

Cite this

@article{eb06de871e884ed186a7ede890caf741,

title = "Low-Voltage, Flexible IGZO Transistors Gated by PSSNa Electrolyte",

keywords = "Electric double layer transistors (EDLTs), Carving, cutting, and flip-chip bonding (CCFB), Flexible, Low operating voltages",

author = "Lulu Du and Dandan He and Yaxuan Liu and Mingsheng Xu and Qingpu Wang and Qian Xin and Aimin Song",

year = "2018",

month = sep,

doi = "10.1109/LED.2018.2862910",

language = "English",

volume = "39",

pages = "1334 -- 1337",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "IEEE",

number = "9",

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T1 - Low-Voltage, Flexible IGZO Transistors Gated by PSSNa Electrolyte

AU - Du, Lulu

AU - He, Dandan

AU - Liu, Yaxuan

AU - Xu, Mingsheng

AU - Wang, Qingpu

AU - Xin, Qian

AU - Song, Aimin

PY - 2018/9

Y1 - 2018/9

KW - Electric double layer transistors (EDLTs)

KW - Carving, cutting, and flip-chip bonding (CCFB)

KW - Flexible

KW - Low operating voltages

U2 - 10.1109/LED.2018.2862910

DO - 10.1109/LED.2018.2862910

M3 - Article

SN - 0741-3106

VL - 39

SP - 1334

EP - 1337

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 9

ER -

Low-Voltage, Flexible IGZO Transistors Gated by PSSNa Electrolyte

Keywords

Access to Document

Projects

Nano-rectennas for heat-to-electricity conversion. Graphene

Cite this