TY - JOUR
T1 - Low-Voltage, Full-Swing InGaZnO-Based Inverters Enabled by Solution-Processed, Ultra-Thin Alx Oy
AU - Cai, Wensi
AU - Zhang, Jiawei
AU - Wilson, Joshua
AU - Song, Aimin
PY - 2019
Y1 - 2019
N2 - High-performance, full-swing inverters implemented with InGaZnO thin-film transistors (TFTs) have been demonstrated capable of operating at a very low-voltage. The threshold voltage of the load and drive TFTs were modified through careful change of the gate dielectric anodization voltage. Both the load and drive TFTs show excellent electrical properties, including a current ON/OFF ratio > 10 6 and a subthreshold swing close to the theoretical limit. As a result, the inverters show high voltage gains up to 34 at a supply voltage of only 1 V as well as high noise margins >92% of the theoretical maximum. The devices and the fabrication process might have potential applications in future wearable and disposable electronics where low cost and low power are vital.
AB - High-performance, full-swing inverters implemented with InGaZnO thin-film transistors (TFTs) have been demonstrated capable of operating at a very low-voltage. The threshold voltage of the load and drive TFTs were modified through careful change of the gate dielectric anodization voltage. Both the load and drive TFTs show excellent electrical properties, including a current ON/OFF ratio > 10 6 and a subthreshold swing close to the theoretical limit. As a result, the inverters show high voltage gains up to 34 at a supply voltage of only 1 V as well as high noise margins >92% of the theoretical maximum. The devices and the fabrication process might have potential applications in future wearable and disposable electronics where low cost and low power are vital.
U2 - 10.1109/LED.2019.2924714
DO - 10.1109/LED.2019.2924714
M3 - Article
VL - 40
SP - 1285
EP - 1288
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
IS - 8
ER -