Low-Voltage, Full-Swing InGaZnO-Based Inverters Enabled by Solution-Processed, Ultra-Thin Alx Oy

Wensi Cai, Jiawei Zhang, Joshua Wilson, Aimin Song

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Abstract

High-performance, full-swing inverters implemented with InGaZnO thin-film transistors (TFTs) have been demonstrated capable of operating at a very low-voltage. The threshold voltage of the load and drive TFTs were modified through careful change of the gate dielectric anodization voltage. Both the load and drive TFTs show excellent electrical properties, including a current ON/OFF ratio > 10 6 and a subthreshold swing close to the theoretical limit. As a result, the inverters show high voltage gains up to 34 at a supply voltage of only 1 V as well as high noise margins >92% of the theoretical maximum. The devices and the fabrication process might have potential applications in future wearable and disposable electronics where low cost and low power are vital.
Original languageEnglish
Pages (from-to)1285-1288
JournalIEEE Electron Device Letters
Volume40
Issue number8
Early online date24 Jun 2019
DOIs
Publication statusPublished - 2019

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