Low Voltage Operation of IGZO Thin Film Transistors Enabled by Ultrathin Al2O3 Gate Dielectric

Low Voltage Operation of IGZO Thin Film Transistors Enabled by Ultrathin Al₂O₃ Gate Dielectric

Pengfei Ma, Lulu Du, Yiming Wang, Ran Jiang, Qian Xin, Yuxiang Li, Aimin Song

Research output: Contribution to journal › Article › peer-review

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title = "Low Voltage Operation of IGZO Thin Film Transistors Enabled by Ultrathin Al2O3 Gate Dielectric",

author = "Pengfei Ma and Lulu Du and Yiming Wang and Ran Jiang and Qian Xin and Yuxiang Li and Aimin Song",

year = "2018",

month = jan,

day = "1",

doi = "10.1063/1.5003662",

language = "English",

volume = "112",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

}

TY - JOUR

T1 - Low Voltage Operation of IGZO Thin Film Transistors Enabled by Ultrathin Al2O3 Gate Dielectric

AU - Ma, Pengfei

AU - Du, Lulu

AU - Wang, Yiming

AU - Jiang, Ran

AU - Xin, Qian

AU - Li, Yuxiang

AU - Song, Aimin

PY - 2018/1/1

Y1 - 2018/1/1

U2 - 10.1063/1.5003662

DO - 10.1063/1.5003662

M3 - Article

SN - 0003-6951

VL - 112

JO - Applied Physics Letters

JF - Applied Physics Letters

M1 - 023501

ER -