Low voltage organic transistors with water-processed gum arabic dielectric

Mané Seck; Navid Dian; Abdou K. Diallo; Sheida Faraji; Meriem Saadi; Mohsen Erouel; El Hadji  Babacar Ly; Kamel  Khiroun; Leszek Majewski

Low voltage organic transistors with water-processed gum arabic dielectric

Mané Seck, Navid Dian, Abdou K. Diallo, Sheida Faraji, Meriem Saadi, Mohsen Erouel, El Hadji Babacar Ly, Kamel Khiroun, Leszek Majewski

Research output: Contribution to journal › Article › peer-review

Abstract

— In this communication, low voltage organic thin film transistors (OTFTs) using water-processed gum arabic (GA) as the gate dielectric are reported. The fabricated OTFTs operate at 3 V with a field-effect mobility in the saturation regime µsat = 0.6 cm2V-1s-1, threshold voltage Vth = -0.35 V, subthreshold swing SS = 350 mV/dec, and on/off current ratio ION/OFF > 102. The characterization of metal-insulator-metal (MIM) capacitors shows that the studied GA displays high dielectric constant at 1 kHz (k ~ 30) and that the leakage current density through the prepared (1250 ± 14) nm thick GA films is around 10-7 A/cm2 at ±3 V. As a result, gum arabic emerges as a promising gate dielectric for low voltage OTFTs especially when the requirements of eco-friendly manufacturing are considered.

Original language	English
Journal	Synthetic Metals
Publication status	Accepted/In press - 29 May 2020

Keywords

Organic thin film transistor (OTFT)
gum arabic (GA)
biodegradable dielectric
water-processed insulator
low voltage transistor operation

Embargoed Document

Low voltage organic transistors with water-processed gum arabic dielectric - Final
Accepted author manuscript, 1.34 MB
Embargo ends: 1/01/30

Cite this

@article{5e97b2031bb04f1e88d935fd7cbd7064,

title = "Low voltage organic transistors with water-processed gum arabic dielectric",

abstract = "— In this communication, low voltage organic thin film transistors (OTFTs) using water-processed gum arabic (GA) as the gate dielectric are reported. The fabricated OTFTs operate at 3 V with a field-effect mobility in the saturation regime µsat = 0.6 cm2V-1s-1, threshold voltage Vth = -0.35 V, subthreshold swing SS = 350 mV/dec, and on/off current ratio ION/OFF > 102. The characterization of metal-insulator-metal (MIM) capacitors shows that the studied GA displays high dielectric constant at 1 kHz (k ~ 30) and that the leakage current density through the prepared (1250 ± 14) nm thick GA films is around 10-7 A/cm2 at ±3 V. As a result, gum arabic emerges as a promising gate dielectric for low voltage OTFTs especially when the requirements of eco-friendly manufacturing are considered.",

keywords = "Organic thin film transistor (OTFT), gum arabic (GA), biodegradable dielectric, water-processed insulator, low voltage transistor operation",

author = "Man{\'e} Seck and Navid Dian and Diallo, {Abdou K.} and Sheida Faraji and Meriem Saadi and Mohsen Erouel and {Babacar Ly}, {El Hadji} and Kamel Khiroun and Leszek Majewski",

year = "2020",

month = may,

day = "29",

language = "English",

journal = "Synthetic Metals",

issn = "0379-6779",

publisher = "Elsevier BV",

}

TY - JOUR

T1 - Low voltage organic transistors with water-processed gum arabic dielectric

AU - Seck, Mané

AU - Dian, Navid

AU - Diallo, Abdou K.

AU - Faraji, Sheida

AU - Saadi, Meriem

AU - Erouel, Mohsen

AU - Babacar Ly, El Hadji

AU - Khiroun, Kamel

AU - Majewski, Leszek

PY - 2020/5/29

Y1 - 2020/5/29

N2 - — In this communication, low voltage organic thin film transistors (OTFTs) using water-processed gum arabic (GA) as the gate dielectric are reported. The fabricated OTFTs operate at 3 V with a field-effect mobility in the saturation regime µsat = 0.6 cm2V-1s-1, threshold voltage Vth = -0.35 V, subthreshold swing SS = 350 mV/dec, and on/off current ratio ION/OFF > 102. The characterization of metal-insulator-metal (MIM) capacitors shows that the studied GA displays high dielectric constant at 1 kHz (k ~ 30) and that the leakage current density through the prepared (1250 ± 14) nm thick GA films is around 10-7 A/cm2 at ±3 V. As a result, gum arabic emerges as a promising gate dielectric for low voltage OTFTs especially when the requirements of eco-friendly manufacturing are considered.

AB - — In this communication, low voltage organic thin film transistors (OTFTs) using water-processed gum arabic (GA) as the gate dielectric are reported. The fabricated OTFTs operate at 3 V with a field-effect mobility in the saturation regime µsat = 0.6 cm2V-1s-1, threshold voltage Vth = -0.35 V, subthreshold swing SS = 350 mV/dec, and on/off current ratio ION/OFF > 102. The characterization of metal-insulator-metal (MIM) capacitors shows that the studied GA displays high dielectric constant at 1 kHz (k ~ 30) and that the leakage current density through the prepared (1250 ± 14) nm thick GA films is around 10-7 A/cm2 at ±3 V. As a result, gum arabic emerges as a promising gate dielectric for low voltage OTFTs especially when the requirements of eco-friendly manufacturing are considered.

KW - Organic thin film transistor (OTFT)

KW - gum arabic (GA)

KW - biodegradable dielectric

KW - water-processed insulator

KW - low voltage transistor operation

M3 - Article

SN - 0379-6779

JO - Synthetic Metals

JF - Synthetic Metals

ER -

Low voltage organic transistors with water-processed gum arabic dielectric

Abstract

Keywords

Embargoed Document

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