Abstract
This report describes the development of a gas sensor platform based on all solution-processed bottom-gate bottom contact organic field-effect transistors that operate at ≤ -2 V. The sensor was able to detect ammonia as low as 600 ppb under high relative humidity (RH=80%).
Original language | English |
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Pages | 162-164 |
Number of pages | 3 |
Publication status | Published - 12 Sept 2016 |
Event | 32nd International Conference on Digital Printing Technologies, NIP 2016: The 32nd International Conference on Digital Printing Technologies - Renold Building, The University of Manchester, Manchester, United Kingdom Duration: 12 Sept 2016 → 16 Sept 2016 Conference number: 32 http://www.imaging.org/site/IST/Conferences/NIP/Printing_for_Fabrication_2016/IST/Conferences/NIP/2016/Printing_For_Fabrication_NIP.aspx?hkey=7a2f5523-5e83-4d39-81a0-cb2a385f3c6b |
Conference
Conference | 32nd International Conference on Digital Printing Technologies, NIP 2016 |
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Abbreviated title | NIP |
Country/Territory | United Kingdom |
City | Manchester |
Period | 12/09/16 → 16/09/16 |
Internet address |
Keywords
- Organic field effect transistor
- Low voltage
- Printable sensor
- Ammonia
Research Beacons, Institutes and Platforms
- National Graphene Institute