LUMINESCENCE AND DEEP LEVEL STUDIES OF LINE DISLOCATIONS IN GALLIUM PHOSPHIDE.

B. Hamilton*, A. R. Peaker, D. R. Wight

*Corresponding author for this work

Research output: Chapter in Book/Conference proceedingConference contributionpeer-review

Abstract

Luminescence decay measurements of carrier lifetime and deep level measurements have been made on undoped n-type GaP. Regions of varying dislocations density have been measured in an attempt to investigate deep level signatures which may be associated with dislocations and with the efficient non-radiative recombination associated with these defects.

Original languageEnglish
Title of host publicationJournal de Physique (Paris), Colloque
Pages233-241
Number of pages9
Edition9
DOIs
Publication statusPublished - 1983

Publication series

NameJournal de Physique (Paris), Colloque
Number9
Volume44
ISSN (Print)0449-1947

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