Photoluminescence of silicon implanted with erbium and oxygen was measured in the time domain focussing on the temperature and excitation density dependence of the intra-4f-shell emission from Er3+. The decay of this luminescence is similar for the different optically active crystal field split Er-centres. At low temperatures the luminescence transients consist of a fast initial non-exponential component followed by slower exponential behaviour. An increase in excitation density results in a higher proportion of the luminescence decaying with the faster decay time. Our results indicate a relation of the fast component to nonradiative processes. Auger recombination is proposed as a possible mechanism.
|Number of pages||6|
|Journal||Materials Research Society Symposium - Proceedings|
|Publication status||Published - 1996|
|Event||Proceedings of the 1996 MRS Spring Symposium - San Francisco, United States|
Duration: 8 Apr 1996 → 12 Apr 1996