Lumped Equivalent Circuit De-embedding of GaAs Structures [PHEMT Example]

C Duff; R Sloan

doi:10.1109/EDMO.2002.1174959

Lumped Equivalent Circuit De-embedding of GaAs Structures [PHEMT Example]

C Duff, R Sloan

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

RF on-wafer device measurements require the provision of probe contact pads and transmission line structures to feed the device ports. A lumped equivalent circuit of the feed structure as determined through the measurement of on-wafer dummy structures and electromagnetic simulation enables three-step device de-embedding to be performed by matrix conversion of the measured S-parameters. The technique is applied to measurements of a Filtronic 6×50 μm GaAs PHEMT to obtain pure device data for large-signal modelling. The drawbacks of using a lumped element technique for large device structures at high frequencies are highlighted.

Original language	English
Title of host publication	host publication
Number of pages	7
DOIs	https://doi.org/10.1109/EDMO.2002.1174959
Publication status	Published - 2002
Event	Electron Devices for Microwave and Optoelectronic Applications, 2002. EDMO 2002. The 10th IEEE International Symposium on - Duration: 1 Jan 1824 → …

Conference

Conference	Electron Devices for Microwave and Optoelectronic Applications, 2002. EDMO 2002. The 10th IEEE International Symposium on
Period	1/01/24 → …

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10.1109/EDMO.2002.1174959

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title = "Lumped Equivalent Circuit De-embedding of GaAs Structures [PHEMT Example]",

abstract = "RF on-wafer device measurements require the provision of probe contact pads and transmission line structures to feed the device ports. A lumped equivalent circuit of the feed structure as determined through the measurement of on-wafer dummy structures and electromagnetic simulation enables three-step device de-embedding to be performed by matrix conversion of the measured S-parameters. The technique is applied to measurements of a Filtronic 6×50 μm GaAs PHEMT to obtain pure device data for large-signal modelling. The drawbacks of using a lumped element technique for large device structures at high frequencies are highlighted.",

author = "C Duff and R Sloan",

year = "2002",

doi = "10.1109/EDMO.2002.1174959",

language = "English",

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note = "Electron Devices for Microwave and Optoelectronic Applications, 2002. EDMO 2002. The 10th IEEE International Symposium on ; Conference date: 01-01-1824",

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AU - Duff, C

AU - Sloan, R

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N2 - RF on-wafer device measurements require the provision of probe contact pads and transmission line structures to feed the device ports. A lumped equivalent circuit of the feed structure as determined through the measurement of on-wafer dummy structures and electromagnetic simulation enables three-step device de-embedding to be performed by matrix conversion of the measured S-parameters. The technique is applied to measurements of a Filtronic 6×50 μm GaAs PHEMT to obtain pure device data for large-signal modelling. The drawbacks of using a lumped element technique for large device structures at high frequencies are highlighted.

AB - RF on-wafer device measurements require the provision of probe contact pads and transmission line structures to feed the device ports. A lumped equivalent circuit of the feed structure as determined through the measurement of on-wafer dummy structures and electromagnetic simulation enables three-step device de-embedding to be performed by matrix conversion of the measured S-parameters. The technique is applied to measurements of a Filtronic 6×50 μm GaAs PHEMT to obtain pure device data for large-signal modelling. The drawbacks of using a lumped element technique for large device structures at high frequencies are highlighted.

U2 - 10.1109/EDMO.2002.1174959

DO - 10.1109/EDMO.2002.1174959

M3 - Conference contribution

BT - host publication

T2 - Electron Devices for Microwave and Optoelectronic Applications, 2002. EDMO 2002. The 10th IEEE International Symposium on

Y2 - 1 January 1824

ER -

Lumped Equivalent Circuit De-embedding of GaAs Structures [PHEMT Example]

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