Magnetic Tunnel Junctions With Magnetic Semiconductor Electrodes

Y J Lee, A Kumar, I J Vera Marun, M P de Jong, R Jansen

    Research output: Contribution to journalArticlepeer-review


    Spin-polarized tunneling is investigated in magnetic tunnel junctions containing an ultrathin interfacial layer of Co:TiO2 magnetic semiconductor. The Co:TiO2 layers (0 to 1 nm thick) are inserted at the SrTiO3/Co interface in La0.67Sr0.33MnO3/SrTiO3/Co tunnel junctions. For all junctions we find a negative tunnel magnetoresistance, which decreases upon the insertion of Co:TiO2, while the junction resistance increases strongly. This suggests that the ultrathin Co:TiO2 is a paramagnetic insulator that acts as an additional tunnel barrier, in contrast to thick (180 nm) layers grown under comparable conditions, which exhibit metallic impurity band conduction and room-temperature ferromagnetism.
    Original languageEnglish
    Pages (from-to)1683-1686
    Number of pages4
    JournalIeee Transactions on Magnetics
    Issue number6
    Publication statusPublished - Jun 2010


    • \$hboxLa\_0.67hboxSr\_0.33hboxMnO\_3\$
    • \$hbox\{La\}\_\{0.67\}hbox\{Sr\}\_\{0.33\}hbox\{MnO\}\_\{3\}\$
    • Charge carriers
    • cobalt
    • Cobalt-doped \$hbox\{TiO\}\_\{2\}\$
    • Cobalt-doped \$hboxTiO\_2\$
    • conduction bands
    • ferromagnetic materials
    • impurity states
    • junction resistance
    • La0.67Sr0.33MnO3-SrTiO3-TiO2:Co-Co
    • lanthanum compounds
    • Magnetic semiconductor
    • magnetic semiconductor electrodes
    • magnetic semiconductors
    • magnetic thin films
    • Magnetic tunneling
    • magnetic tunnel junction
    • Magnetic tunnel junctions
    • magnetoelectronics
    • metallic impurity band conduction
    • Mine
    • negative tunnel magnetoresistance
    • paramagnetic insulator
    • paramagnetic materials
    • pulsed laser deposition
    • room-temperature ferromagnetism
    • Semiconductor impurities
    • semiconductor thin films
    • spin polarised transport
    • Spin-polarized tunneling
    • Spintronics
    • Strontium
    • strontium compounds
    • temperature 293 K to 298 K
    • titanium compounds
    • Tunneling magnetoresistance
    • tunnelling magnetoresistance
    • ultrathin interfacial layer


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