Magneto-optical study of correlated electron-hole layers in single-barrier heterostructures

A. Parlangeli, P. C M Christianen, A. K. Geim, J. C. Maan, L. Eaves, M. Henini

    Research output: Contribution to journalArticlepeer-review

    Abstract

    We report the low-temperature photoluminescence investigation of a single-barrier GaAs/AlAs/ GaAs p-i-n heterostructure with applied magnetic fields of up to 17 T. Under conditions of forward bias, electrons and holes accumulate at opposite sides of the barrier to form two coupled 2D layers of tunable density. We observe an onset of polarized recombination peaks originating from these layers when the filling factor is immediately lower than two. From the properties of the onset and the shift of the peaks with applied voltage we conclude that we have to take into account the Coulomb interaction between the layers to describe properly the physical situation of the system and we propose the picture of a correlated ground state to explain the experimental findings.
    Original languageEnglish
    Pages (from-to)587-590
    Number of pages3
    JournalPhysica Status Solidi (A) Applied Research
    Volume164
    Issue number1
    Publication statusPublished - 1997

    Keywords

    • fields
    • integer

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