Manipulation of the homogeneous linewidth of an individual in(Ga)As quantum dot

R. Oulton; J. J. Finley; A. D. Ashmore; I. S. Gregory; D. J. Mowbray; M. S. Skolnick; M. J. Steer; San Lin Liew; M. A. Migliorato; A. J. Cullis

doi:045313 10.1103/PhysRevB.66.045313

Manipulation of the homogeneous linewidth of an individual in(Ga)As quantum dot

R. Oulton, J. J. Finley, A. D. Ashmore, I. S. Gregory, D. J. Mowbray, M. S. Skolnick, M. J. Steer, San Lin Liew, M. A. Migliorato, A. J. Cullis

Research output: Contribution to journal › Article › peer-review

Abstract

By application of external electric field, we demonstrate the ability to controllably manipulate the homogenous linewidth of exciton transitions in a single self-assembled In(Ga)As quantum dot (QD). Complementary emission (photoluminescence) and absorption (photocurrent) measurements are used to probe directly the competing processes of radiative recombination and carrier tunnelling escape from the dot. At high electric fields (≳ 100 kV/cm) the exciton line shape is lifetime (homogenously) broadened with mesoscopic broadening effects arising from coupling of the QD to its electrostatic environment determining the low field line shape.

Original language	English
Article number	045313
Pages (from-to)	453131-453134
Number of pages	3
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	66
Issue number	4
DOIs	https://doi.org/045313 10.1103/PhysRevB.66.045313
Publication status	Published - 15 Jul 2002

Access to Document

045313 10.1103/PhysRevB.66.045313

Cite this

Oulton, R., Finley, J. J., Ashmore, A. D., Gregory, I. S., Mowbray, D. J., Skolnick, M. S., Steer, M. J., Liew, S. L., Migliorato, M. A., & Cullis, A. J. (2002). Manipulation of the homogeneous linewidth of an individual in(Ga)As quantum dot. Physical Review B - Condensed Matter and Materials Physics, 66(4), 453131-453134. Article 045313. https://doi.org/045313 10.1103/PhysRevB.66.045313

@article{e818b59d018f437286f00c5ddaaa8492,

title = "Manipulation of the homogeneous linewidth of an individual in(Ga)As quantum dot",

abstract = "By application of external electric field, we demonstrate the ability to controllably manipulate the homogenous linewidth of exciton transitions in a single self-assembled In(Ga)As quantum dot (QD). Complementary emission (photoluminescence) and absorption (photocurrent) measurements are used to probe directly the competing processes of radiative recombination and carrier tunnelling escape from the dot. At high electric fields (≳ 100 kV/cm) the exciton line shape is lifetime (homogenously) broadened with mesoscopic broadening effects arising from coupling of the QD to its electrostatic environment determining the low field line shape.",

author = "R. Oulton and Finley, {J. J.} and Ashmore, {A. D.} and Gregory, {I. S.} and Mowbray, {D. J.} and Skolnick, {M. S.} and Steer, {M. J.} and Liew, {San Lin} and Migliorato, {M. A.} and Cullis, {A. J.}",

note = "Times Cited: 42",

year = "2002",

month = jul,

day = "15",

doi = "045313 10.1103/PhysRevB.66.045313",

language = "English",

volume = "66",

pages = "453131--453134",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Physical Society",

number = "4",

}

TY - JOUR

T1 - Manipulation of the homogeneous linewidth of an individual in(Ga)As quantum dot

AU - Oulton, R.

AU - Finley, J. J.

AU - Ashmore, A. D.

AU - Gregory, I. S.

AU - Mowbray, D. J.

AU - Skolnick, M. S.

AU - Steer, M. J.

AU - Liew, San Lin

AU - Migliorato, M. A.

AU - Cullis, A. J.

N1 - Times Cited: 42

PY - 2002/7/15

Y1 - 2002/7/15

N2 - By application of external electric field, we demonstrate the ability to controllably manipulate the homogenous linewidth of exciton transitions in a single self-assembled In(Ga)As quantum dot (QD). Complementary emission (photoluminescence) and absorption (photocurrent) measurements are used to probe directly the competing processes of radiative recombination and carrier tunnelling escape from the dot. At high electric fields (≳ 100 kV/cm) the exciton line shape is lifetime (homogenously) broadened with mesoscopic broadening effects arising from coupling of the QD to its electrostatic environment determining the low field line shape.

AB - By application of external electric field, we demonstrate the ability to controllably manipulate the homogenous linewidth of exciton transitions in a single self-assembled In(Ga)As quantum dot (QD). Complementary emission (photoluminescence) and absorption (photocurrent) measurements are used to probe directly the competing processes of radiative recombination and carrier tunnelling escape from the dot. At high electric fields (≳ 100 kV/cm) the exciton line shape is lifetime (homogenously) broadened with mesoscopic broadening effects arising from coupling of the QD to its electrostatic environment determining the low field line shape.

U2 - 045313 10.1103/PhysRevB.66.045313

DO - 045313 10.1103/PhysRevB.66.045313

M3 - Article

SN - 1098-0121

VL - 66

SP - 453131

EP - 453134

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 4

M1 - 045313

ER -

Manipulation of the homogeneous linewidth of an individual in(Ga)As quantum dot

Abstract

Access to Document

Fingerprint

Cite this