Material characterization of highly strained and partially strain compensated InxGa1-xAs/InyAl1-yAs quantum cascade light emitting diodes grown by MBE for emission in the near infrared (2-4 μm)

C. J. Mitchell; J. L. Sly; M. Missous; S. Banerjee; K. A. Shore

doi:10.1109/EDMO.2002.1174922

Material characterization of highly strained and partially strain compensated In_xGa_1-xAs/In_yAl_1-yA_s quantum cascade light emitting diodes grown by MBE for emission in the near infrared (2-4 μm)

C. J. Mitchell, J. L. Sly, M. Missous, S. Banerjee, K. A. Shore

Bangor University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Material characterization of quantum cascade (QC) structures aimed at producing emission in the near to mid infrared wavelengths (2-4 μm) is presented. It is proposed that this material system (grown by MBE under stoichiometric growth conditions) can be developed to produce a quantum cascade laser (QCL) operating at communication wavelengths below 2 μm. The In_xGa_1-xAs/In_yAl_1-yAs on a semi-insulating InP substrate material system demonstrates compressive strain in the quantum well (QW) material up to 1.85% (x=0.8) and partially compensating tensile strain in the barrier material of up to 1.86% (y=0.25) both with respect to InP. Presented is a comparison of lattice matched and highly strained devices. Experimental data is provided to demonstrate the excellent optical and electrical characteristics of the material (photoluminescence signals at room temperature and I-V measurements down to 20 K). The results are encouraging for the development of this material system to produce the first QC emission approaching 2 μm using current InGaAs/InAlAs on InP MBE tooling technology.

Original language	English
Title of host publication	The 10th IEEE international symposium on electron devices for microwave and optoelectronic applications
Subtitle of host publication	EDMO 2002
Publisher	IEEE
Pages	8-13
Number of pages	6
ISBN (Print)	0780375300
DOIs	https://doi.org/10.1109/EDMO.2002.1174922
Publication status	Published - Jan 2002
Event	10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications - Manchester, United Kingdom Duration: 18 Nov 2002 → 19 Nov 2002

Publication series

Name	IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications
Volume	2002-January

Conference

Conference	10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications
Abbreviated title	EDMO 2002
Country/Territory	United Kingdom
City	Manchester
Period	18/11/02 → 19/11/02

Keywords

Capacitive sensors
Electric variables
Indium phosphide
Lattices
Optical materials
Photoluminescence
Quantum cascade lasers
Stimulated emission
Temperature measurement
Tensile strain

Access to Document

10.1109/EDMO.2002.1174922

Cite this

Mitchell, C. J., Sly, J. L., Missous, M., Banerjee, S., & Shore, K. A. (2002). Material characterization of highly strained and partially strain compensated In_xGa_1-xAs/In_yAl_1-yA_s quantum cascade light emitting diodes grown by MBE for emission in the near infrared (2-4 μm). In The 10th IEEE international symposium on electron devices for microwave and optoelectronic applications: EDMO 2002 (pp. 8-13). Article 1174922 (IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications; Vol. 2002-January). IEEE. https://doi.org/10.1109/EDMO.2002.1174922

Mitchell, C. J. ; Sly, J. L. ; Missous, M. et al. / Material characterization of highly strained and partially strain compensated In_xGa_1-xAs/In_yAl_1-yA_s quantum cascade light emitting diodes grown by MBE for emission in the near infrared (2-4 μm). The 10th IEEE international symposium on electron devices for microwave and optoelectronic applications: EDMO 2002. IEEE, 2002. pp. 8-13 (IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications).

@inproceedings{f822e02b9b2b424ab41fb96eb0314981,

title = "Material characterization of highly strained and partially strain compensated InxGa1-xAs/InyAl1-yAs quantum cascade light emitting diodes grown by MBE for emission in the near infrared (2-4 μm)",

abstract = "Material characterization of quantum cascade (QC) structures aimed at producing emission in the near to mid infrared wavelengths (2-4 μm) is presented. It is proposed that this material system (grown by MBE under stoichiometric growth conditions) can be developed to produce a quantum cascade laser (QCL) operating at communication wavelengths below 2 μm. The InxGa1-xAs/InyAl1-yAs on a semi-insulating InP substrate material system demonstrates compressive strain in the quantum well (QW) material up to 1.85% (x=0.8) and partially compensating tensile strain in the barrier material of up to 1.86% (y=0.25) both with respect to InP. Presented is a comparison of lattice matched and highly strained devices. Experimental data is provided to demonstrate the excellent optical and electrical characteristics of the material (photoluminescence signals at room temperature and I-V measurements down to 20 K). The results are encouraging for the development of this material system to produce the first QC emission approaching 2 μm using current InGaAs/InAlAs on InP MBE tooling technology.",

keywords = "Capacitive sensors, Electric variables, Indium phosphide, Lattices, Optical materials, Photoluminescence, Quantum cascade lasers, Stimulated emission, Temperature measurement, Tensile strain",

author = "Mitchell, {C. J.} and Sly, {J. L.} and M. Missous and S. Banerjee and Shore, {K. A.}",

year = "2002",

month = jan,

doi = "10.1109/EDMO.2002.1174922",

language = "English",

isbn = "0780375300",

series = "IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications",

publisher = "IEEE",

pages = "8--13",

booktitle = "The 10th IEEE international symposium on electron devices for microwave and optoelectronic applications",

address = "United States",

note = "10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, EDMO 2002 ; Conference date: 18-11-2002 Through 19-11-2002",

}

Mitchell, CJ, Sly, JL, Missous, M, Banerjee, S & Shore, KA 2002, Material characterization of highly strained and partially strain compensated In_xGa_1-xAs/In_yAl_1-yA_s quantum cascade light emitting diodes grown by MBE for emission in the near infrared (2-4 μm). in The 10th IEEE international symposium on electron devices for microwave and optoelectronic applications: EDMO 2002., 1174922, IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, vol. 2002-January, IEEE, pp. 8-13, 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, Manchester, United Kingdom, 18/11/02. https://doi.org/10.1109/EDMO.2002.1174922

Material characterization of highly strained and partially strain compensated In_xGa_1-xAs/In_yAl_1-yA_s quantum cascade light emitting diodes grown by MBE for emission in the near infrared (2-4 μm). / Mitchell, C. J.; Sly, J. L.; Missous, M. et al.
The 10th IEEE international symposium on electron devices for microwave and optoelectronic applications: EDMO 2002. IEEE, 2002. p. 8-13 1174922 (IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications; Vol. 2002-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Material characterization of highly strained and partially strain compensated InxGa1-xAs/InyAl1-yAs quantum cascade light emitting diodes grown by MBE for emission in the near infrared (2-4 μm)

AU - Mitchell, C. J.

AU - Sly, J. L.

AU - Missous, M.

AU - Banerjee, S.

AU - Shore, K. A.

PY - 2002/1

Y1 - 2002/1

N2 - Material characterization of quantum cascade (QC) structures aimed at producing emission in the near to mid infrared wavelengths (2-4 μm) is presented. It is proposed that this material system (grown by MBE under stoichiometric growth conditions) can be developed to produce a quantum cascade laser (QCL) operating at communication wavelengths below 2 μm. The InxGa1-xAs/InyAl1-yAs on a semi-insulating InP substrate material system demonstrates compressive strain in the quantum well (QW) material up to 1.85% (x=0.8) and partially compensating tensile strain in the barrier material of up to 1.86% (y=0.25) both with respect to InP. Presented is a comparison of lattice matched and highly strained devices. Experimental data is provided to demonstrate the excellent optical and electrical characteristics of the material (photoluminescence signals at room temperature and I-V measurements down to 20 K). The results are encouraging for the development of this material system to produce the first QC emission approaching 2 μm using current InGaAs/InAlAs on InP MBE tooling technology.

AB - Material characterization of quantum cascade (QC) structures aimed at producing emission in the near to mid infrared wavelengths (2-4 μm) is presented. It is proposed that this material system (grown by MBE under stoichiometric growth conditions) can be developed to produce a quantum cascade laser (QCL) operating at communication wavelengths below 2 μm. The InxGa1-xAs/InyAl1-yAs on a semi-insulating InP substrate material system demonstrates compressive strain in the quantum well (QW) material up to 1.85% (x=0.8) and partially compensating tensile strain in the barrier material of up to 1.86% (y=0.25) both with respect to InP. Presented is a comparison of lattice matched and highly strained devices. Experimental data is provided to demonstrate the excellent optical and electrical characteristics of the material (photoluminescence signals at room temperature and I-V measurements down to 20 K). The results are encouraging for the development of this material system to produce the first QC emission approaching 2 μm using current InGaAs/InAlAs on InP MBE tooling technology.

KW - Capacitive sensors

KW - Electric variables

KW - Indium phosphide

KW - Lattices

KW - Optical materials

KW - Photoluminescence

KW - Quantum cascade lasers

KW - Stimulated emission

KW - Temperature measurement

KW - Tensile strain

UR - http://www.scopus.com/inward/record.url?scp=84949187969&partnerID=8YFLogxK

U2 - 10.1109/EDMO.2002.1174922

DO - 10.1109/EDMO.2002.1174922

M3 - Conference contribution

AN - SCOPUS:84949187969

SN - 0780375300

T3 - IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications

SP - 8

EP - 13

BT - The 10th IEEE international symposium on electron devices for microwave and optoelectronic applications

PB - IEEE

T2 - 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications

Y2 - 18 November 2002 through 19 November 2002

ER -

Mitchell CJ, Sly JL, Missous M, Banerjee S, Shore KA. Material characterization of highly strained and partially strain compensated In_xGa_1-xAs/In_yAl_1-yA_s quantum cascade light emitting diodes grown by MBE for emission in the near infrared (2-4 μm). In The 10th IEEE international symposium on electron devices for microwave and optoelectronic applications: EDMO 2002. IEEE. 2002. p. 8-13. 1174922. (IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications). doi: 10.1109/EDMO.2002.1174922

Material characterization of highly strained and partially strain compensated InxGa1-xAs/InyAl1-yAs quantum cascade light emitting diodes grown by MBE for emission in the near infrared (2-4 μm)