MBE grown GaSb, AlSb crystals high pressure Eeectrical characterisation

L. Konczewicz; J. M. Mercy; J-L Robert; L. Dobaczewski; A. R. Peaker

doi:10.7567/JJAPS.32S1.261

MBE grown GaSb, AlSb crystals high pressure Eeectrical characterisation

L. Konczewicz, J. M. Mercy, J-L Robert, L. Dobaczewski, A. R. Peaker

EEE - Academic & Research

Research output: Contribution to journal › Article › peer-review

Abstract

For growth of GaAlSb layers by MBE method, the new doping Ga2Se3 and Ga2S3 sources have been used for Se and S doping respectively. The electrical transport measurements (Flail effect and resistivity) were used to characterise the grown layers. For GaSb:S layer the role of the two-dimensional electron gas is demonstrated. The Se-donor states in AlSb have been studied and its ionization energy was found to be about 440 meV.

Original language	English
Number of pages	1
Journal	Japanese Journal of Applied Physics
Volume	32
Issue number	Supplement 32-1
DOIs	https://doi.org/10.7567/JJAPS.32S1.261
Publication status	Published - 1 Jan 1993

Access to Document

10.7567/JJAPS.32S1.261

Cite this

@article{2721f8b7e4544249af7db487087c13cd,

title = "MBE grown GaSb, AlSb crystals high pressure Eeectrical characterisation",

abstract = "For growth of GaAlSb layers by MBE method, the new doping Ga2Se3 and Ga2S3 sources have been used for Se and S doping respectively. The electrical transport measurements (Flail effect and resistivity) were used to characterise the grown layers. For GaSb:S layer the role of the two-dimensional electron gas is demonstrated. The Se-donor states in AlSb have been studied and its ionization energy was found to be about 440 meV.",

author = "L. Konczewicz and Mercy, {J. M.} and J-L Robert and L. Dobaczewski and Peaker, {A. R.}",

year = "1993",

month = jan,

day = "1",

doi = "10.7567/JJAPS.32S1.261",

language = "English",

volume = "32",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Institute of Physics Publishing Ltd",

number = "Supplement 32-1",

}

TY - JOUR

T1 - MBE grown GaSb, AlSb crystals high pressure Eeectrical characterisation

AU - Konczewicz, L.

AU - Mercy, J. M.

AU - Robert, J-L

AU - Dobaczewski, L.

AU - Peaker, A. R.

PY - 1993/1/1

Y1 - 1993/1/1

N2 - For growth of GaAlSb layers by MBE method, the new doping Ga2Se3 and Ga2S3 sources have been used for Se and S doping respectively. The electrical transport measurements (Flail effect and resistivity) were used to characterise the grown layers. For GaSb:S layer the role of the two-dimensional electron gas is demonstrated. The Se-donor states in AlSb have been studied and its ionization energy was found to be about 440 meV.

AB - For growth of GaAlSb layers by MBE method, the new doping Ga2Se3 and Ga2S3 sources have been used for Se and S doping respectively. The electrical transport measurements (Flail effect and resistivity) were used to characterise the grown layers. For GaSb:S layer the role of the two-dimensional electron gas is demonstrated. The Se-donor states in AlSb have been studied and its ionization energy was found to be about 440 meV.

UR - http://www.scopus.com/inward/record.url?scp=84956064102&partnerID=8YFLogxK

U2 - 10.7567/JJAPS.32S1.261

DO - 10.7567/JJAPS.32S1.261

M3 - Article

AN - SCOPUS:84956064102

SN - 0021-4922

VL - 32

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - Supplement 32-1

ER -

MBE grown GaSb, AlSb crystals high pressure Eeectrical characterisation

Abstract

Access to Document

Other files and links

Fingerprint

Cite this