Measurement and modelling of power electronic devices at cryogenic temperatures

A. J. Forsyth; S. Y. Yang; P. A. Mawby; P. Igic

doi:10.1049/ip-cds:20050359

Measurement and modelling of power electronic devices at cryogenic temperatures

A. J. Forsyth, S. Y. Yang, P. A. Mawby, P. Igic

Research output: Contribution to journal › Article › peer-review

Abstract

Practical results are used to parameterise a physically based, compact IGBT model for three generations of IGBT (PT, NPT and IGBT3), at temperatures extending down to 50K. Full details are presented of the model parameter variations with temperature over the range 50-300K. The models are then used to examine the performance of a sinusoidal pulse-width-modulated inverter leg at cryogenic temperatures. © The Institution of Engineering and Technology 2006.

Original language	English
Pages (from-to)	407-415
Number of pages	8
Journal	IEE Proceedings: Circuits, Devices and Systems
Volume	153
Issue number	5
DOIs	https://doi.org/10.1049/ip-cds:20050359
Publication status	Published - 2006

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title = "Measurement and modelling of power electronic devices at cryogenic temperatures",

abstract = "Practical results are used to parameterise a physically based, compact IGBT model for three generations of IGBT (PT, NPT and IGBT3), at temperatures extending down to 50K. Full details are presented of the model parameter variations with temperature over the range 50-300K. The models are then used to examine the performance of a sinusoidal pulse-width-modulated inverter leg at cryogenic temperatures. {\textcopyright} The Institution of Engineering and Technology 2006.",

author = "Forsyth, {A. J.} and Yang, {S. Y.} and Mawby, {P. A.} and P. Igic",

year = "2006",

doi = "10.1049/ip-cds:20050359",

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journal = "IEE Proceedings: Circuits, Devices and Systems",

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T1 - Measurement and modelling of power electronic devices at cryogenic temperatures

AU - Forsyth, A. J.

AU - Yang, S. Y.

AU - Mawby, P. A.

AU - Igic, P.

PY - 2006

Y1 - 2006

N2 - Practical results are used to parameterise a physically based, compact IGBT model for three generations of IGBT (PT, NPT and IGBT3), at temperatures extending down to 50K. Full details are presented of the model parameter variations with temperature over the range 50-300K. The models are then used to examine the performance of a sinusoidal pulse-width-modulated inverter leg at cryogenic temperatures. © The Institution of Engineering and Technology 2006.

AB - Practical results are used to parameterise a physically based, compact IGBT model for three generations of IGBT (PT, NPT and IGBT3), at temperatures extending down to 50K. Full details are presented of the model parameter variations with temperature over the range 50-300K. The models are then used to examine the performance of a sinusoidal pulse-width-modulated inverter leg at cryogenic temperatures. © The Institution of Engineering and Technology 2006.

U2 - 10.1049/ip-cds:20050359

DO - 10.1049/ip-cds:20050359

M3 - Article

SN - 1350-2409

VL - 153

SP - 407

EP - 415

JO - IEE Proceedings: Circuits, Devices and Systems

JF - IEE Proceedings: Circuits, Devices and Systems

IS - 5

ER -

Measurement and modelling of power electronic devices at cryogenic temperatures

Abstract

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