Measurement and modelling of power electronic devices at cryogenic temperatures

A. J. Forsyth, S. Y. Yang, P. A. Mawby, P. Igic

    Research output: Contribution to journalArticlepeer-review


    Practical results are used to parameterise a physically based, compact IGBT model for three generations of IGBT (PT, NPT and IGBT3), at temperatures extending down to 50K. Full details are presented of the model parameter variations with temperature over the range 50-300K. The models are then used to examine the performance of a sinusoidal pulse-width-modulated inverter leg at cryogenic temperatures. © The Institution of Engineering and Technology 2006.
    Original languageEnglish
    Pages (from-to)407-415
    Number of pages8
    JournalIEE Proceedings: Circuits, Devices and Systems
    Issue number5
    Publication statusPublished - 2006


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