Measuring, controlling and exploiting heterogeneity in optoelectronic nanowires

Ruqaiya Al-abri, Hoyeon Choi, Patrick Parkinson

Research output: Contribution to journalArticlepeer-review


Fabricated from ZnO, III-N, chalcogenide-based, III-V, hybrid perovskite or other materials, semiconductor nanowires offer single-element and array functionality as photovoltaic, non-linear, electroluminescent and lasing components. In many applications their advantageous properties emerge from their geometry; a high surface-to-volume ratio for facile access to carriers, wavelength-scale dimensions for waveguiding or a small nanowire-substrate footprint enabling heterogeneous growth. However, inhomogeneity during bottom-up growth is ubiquitous and can impact morphology, geometry, crystal structure, defect density, heterostructure dimensions and ultimately functional performance. In this topical review, we discuss the origin and impact of heterogeneity within and between optoelectronic nanowires, and introduce methods to assess, optimise and ultimately exploit wire-to-wire disorder.
Original languageEnglish
JournalJournal of Physics: Photonics
Early online date2 Feb 2021
Publication statusPublished - 2 Feb 2021

Research Beacons, Institutes and Platforms

  • Photon Science Institute


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