Mechanism of metal-semiconductor transition in electric properties of single-walled carbon nanotubes induced by low-energy electron irradiation

Kenichi Kanzaki; Satoru Suzuki; Hiroshi Inokawa; Yukinori Ono; Aravind Vijayaraghavan; Yoshihiro Kobayashi

doi:10.1063/1.2434822

Mechanism of metal-semiconductor transition in electric properties of single-walled carbon nanotubes induced by low-energy electron irradiation

Kenichi Kanzaki, Satoru Suzuki, Hiroshi Inokawa, Yukinori Ono, Aravind Vijayaraghavan, Yoshihiro Kobayashi

Research output: Contribution to journal › Article › peer-review

Abstract

Low-energy electron irradiation causes damage in single-walled carbon nanotubes and changes the electric behavior of a nanotube field-effect transistor from metallic to semiconducting at low temperature. The irradiation damage was found to form an energy barrier of several 10 meV in the nanotube channel. We show that the transition behavior can be reasonably explained by the barrier formation and gate-induced band bending. © 2007 American Institute of Physics.

Original language	English
Article number	034317
Journal	Journal of Applied Physics
Volume	101
Issue number	3
DOIs	https://doi.org/10.1063/1.2434822
Publication status	Published - 2007

Keywords

TRANSISTOR
DAMAGE
BEAM

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10.1063/1.2434822

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title = "Mechanism of metal-semiconductor transition in electric properties of single-walled carbon nanotubes induced by low-energy electron irradiation",

abstract = "Low-energy electron irradiation causes damage in single-walled carbon nanotubes and changes the electric behavior of a nanotube field-effect transistor from metallic to semiconducting at low temperature. The irradiation damage was found to form an energy barrier of several 10 meV in the nanotube channel. We show that the transition behavior can be reasonably explained by the barrier formation and gate-induced band bending. {\textcopyright} 2007 American Institute of Physics.",

keywords = "TRANSISTOR, DAMAGE, BEAM",

author = "Kenichi Kanzaki and Satoru Suzuki and Hiroshi Inokawa and Yukinori Ono and Aravind Vijayaraghavan and Yoshihiro Kobayashi",

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year = "2007",

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journal = "Journal of Applied Physics",

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T1 - Mechanism of metal-semiconductor transition in electric properties of single-walled carbon nanotubes induced by low-energy electron irradiation

AU - Kanzaki, Kenichi

AU - Suzuki, Satoru

AU - Inokawa, Hiroshi

AU - Ono, Yukinori

AU - Vijayaraghavan, Aravind

AU - Kobayashi, Yoshihiro

N1 - Kanzaki, Kenichi Suzuki, Satoru Inokawa, Hiroshi Ono, Yukinori Vijayaraghavan, Aravind Kobayashi, Yoshihiro 23

PY - 2007

Y1 - 2007

N2 - Low-energy electron irradiation causes damage in single-walled carbon nanotubes and changes the electric behavior of a nanotube field-effect transistor from metallic to semiconducting at low temperature. The irradiation damage was found to form an energy barrier of several 10 meV in the nanotube channel. We show that the transition behavior can be reasonably explained by the barrier formation and gate-induced band bending. © 2007 American Institute of Physics.

AB - Low-energy electron irradiation causes damage in single-walled carbon nanotubes and changes the electric behavior of a nanotube field-effect transistor from metallic to semiconducting at low temperature. The irradiation damage was found to form an energy barrier of several 10 meV in the nanotube channel. We show that the transition behavior can be reasonably explained by the barrier formation and gate-induced band bending. © 2007 American Institute of Physics.

KW - TRANSISTOR

KW - DAMAGE

KW - BEAM

U2 - 10.1063/1.2434822

DO - 10.1063/1.2434822

M3 - Article

SN - 1089-7550

VL - 101

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 3

M1 - 034317

ER -

Mechanism of metal-semiconductor transition in electric properties of single-walled carbon nanotubes induced by low-energy electron irradiation

Abstract

Keywords

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