Mesoscopic Effects in Resonant-Tunneling Diodes

J W Sakai, N Lascala, P C Main, P H Beton, T J Foster, A K Geim, L Eaves, M Henini, G Hill, M A Pate

    Research output: Contribution to journalArticlepeer-review


    We have investigated resonant tunnelling in GaAs/(AlGa)As heterostructures which have been fabricated into square mesas 6 x 6 mum. A delta-layer of donors (n approximately 2 x 10(9) cm-2) has been incorporated at the centre of the quantum well which is 9 nm wide. The I(V) characteristics show a feature at approximately 70 mV, which is below the threshold for the main resonance and is due to resonant tunnelling through single donor states in the well. This feature is also present in large area mesas. At lower biases and at low temperatures we see a new set of resonances which, although they occur in all small area mesas, differ in detail between devices with regard to their strength and bias position. The form of the low-bias structure is strongly dependent on temperature, T, below 4 K where several very sharp steps appear, becoming sharper as T is decreased. We have also investigated the dependence of the new structure on magnetic field, B, parallel to the current direction. We attribute the new features to tunnelling through potential fluctuations on the mesoscopic scale due to donor clustering.
    Original languageEnglish
    Pages (from-to)965-968
    Number of pages4
    JournalSolid-state electronics
    Issue number4-6
    Publication statusPublished - 1994


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