Metal - Semiconductor transition in single-walled carbon nanotubes induced by low-energy electron irradiation

Aravind Vijayaraghavan; Kenichi Kanzaki; Saturo Suzuki; Yoshihiro Kobayashi; Hiroshi Inokawa; Yukinori Ono; Swastik Kar; Pulickel M. Ajayan

doi:10.1021/nl0509935

Metal - Semiconductor transition in single-walled carbon nanotubes induced by low-energy electron irradiation

Aravind Vijayaraghavan, Kenichi Kanzaki, Saturo Suzuki, Yoshihiro Kobayashi, Hiroshi Inokawa, Yukinori Ono, Swastik Kar, Pulickel M. Ajayan

Research output: Contribution to journal › Article › peer-review

Abstract

We report the effect of low-energy (1 keV) electron beam irradiation on gated, three-terminal devices constructed from metallic single-walled carbon nanotubes. Pristine devices, which exhibited negligible gate voltage response at room temperature and metallic single-electron transistor characteristics at low temperatures, when exposed to an electron beam, exhibited ambipolar field effect transistor (room temperature) and single-electron transistor (low temperature) characteristics. This metal-semiconductor transition is attributed to inhomogeneous electric fields arising from charging during electron irradiation. © 2005 American Chemical Society.

Original language	English
Pages (from-to)	1575-1579
Number of pages	4
Journal	Nano Letters
Volume	5
Issue number	8
DOIs	https://doi.org/10.1021/nl0509935
Publication status	Published - Aug 2005

Keywords

FIELD-EFFECT TRANSISTORS
TRANSPORT
DEVICES
MEMORY
ROPES

Access to Document

10.1021/nl0509935

Cite this

@article{5b2b43e10890479080ed5cf4a1353c15,

title = "Metal - Semiconductor transition in single-walled carbon nanotubes induced by low-energy electron irradiation",

abstract = "We report the effect of low-energy (1 keV) electron beam irradiation on gated, three-terminal devices constructed from metallic single-walled carbon nanotubes. Pristine devices, which exhibited negligible gate voltage response at room temperature and metallic single-electron transistor characteristics at low temperatures, when exposed to an electron beam, exhibited ambipolar field effect transistor (room temperature) and single-electron transistor (low temperature) characteristics. This metal-semiconductor transition is attributed to inhomogeneous electric fields arising from charging during electron irradiation. {\textcopyright} 2005 American Chemical Society.",

keywords = "FIELD-EFFECT TRANSISTORS, TRANSPORT, DEVICES, MEMORY, ROPES",

author = "Aravind Vijayaraghavan and Kenichi Kanzaki and Saturo Suzuki and Yoshihiro Kobayashi and Hiroshi Inokawa and Yukinori Ono and Swastik Kar and Ajayan, \{Pulickel M.\}",

note = "39",

year = "2005",

month = aug,

doi = "10.1021/nl0509935",

language = "English",

volume = "5",

pages = "1575--1579",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

number = "8",

}

TY - JOUR

T1 - Metal - Semiconductor transition in single-walled carbon nanotubes induced by low-energy electron irradiation

AU - Vijayaraghavan, Aravind

AU - Kanzaki, Kenichi

AU - Suzuki, Saturo

AU - Kobayashi, Yoshihiro

AU - Inokawa, Hiroshi

AU - Ono, Yukinori

AU - Kar, Swastik

AU - Ajayan, Pulickel M.

N1 - 39

PY - 2005/8

Y1 - 2005/8

N2 - We report the effect of low-energy (1 keV) electron beam irradiation on gated, three-terminal devices constructed from metallic single-walled carbon nanotubes. Pristine devices, which exhibited negligible gate voltage response at room temperature and metallic single-electron transistor characteristics at low temperatures, when exposed to an electron beam, exhibited ambipolar field effect transistor (room temperature) and single-electron transistor (low temperature) characteristics. This metal-semiconductor transition is attributed to inhomogeneous electric fields arising from charging during electron irradiation. © 2005 American Chemical Society.

AB - We report the effect of low-energy (1 keV) electron beam irradiation on gated, three-terminal devices constructed from metallic single-walled carbon nanotubes. Pristine devices, which exhibited negligible gate voltage response at room temperature and metallic single-electron transistor characteristics at low temperatures, when exposed to an electron beam, exhibited ambipolar field effect transistor (room temperature) and single-electron transistor (low temperature) characteristics. This metal-semiconductor transition is attributed to inhomogeneous electric fields arising from charging during electron irradiation. © 2005 American Chemical Society.

KW - FIELD-EFFECT TRANSISTORS

KW - TRANSPORT

KW - DEVICES

KW - MEMORY

KW - ROPES

UR - https://www.scopus.com/pages/publications/24344473400

U2 - 10.1021/nl0509935

DO - 10.1021/nl0509935

M3 - Article

SN - 1530-6984

VL - 5

SP - 1575

EP - 1579

JO - Nano Letters

JF - Nano Letters

IS - 8

ER -

Metal - Semiconductor transition in single-walled carbon nanotubes induced by low-energy electron irradiation

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this