Abstract
A method of manufacturing a graphene-based device, comprising (i) providing a graphene assembly comprising one or more layers of graphene 32, a first photoresist layer (ref 34, fig 15) disposed on the one or more layers of graphene, and an ultra-violet (UV) barrier layer (36) disposed on the photoresist layer on an opposite side to the one or more layers of graphene; (ii) transferring the graphene assembly onto a substrate 44 comprising at least one cavity 44a so that the one or more layers of graphene traverse the at least one cavity; (iii) using photolithography to expose portions of the one or more layers of graphene on opposite sides of the at least one cavity;(iv) forming conductive contacts 56 over the exposed portions of graphene; (v) removing the UV barrier layer; and (vi) removing the first photoresist layer. The device may be a gas sensor.
| Original language | English |
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| Patent number | GB2574412 |
| IPC | G01N 27/ 12 A I |
| Priority date | 5/06/18 |
| Publication status | Published - 11 Dec 2019 |