Methylsilane on Cu(1 1 1), a STM study of the (√3×√3) R30°-Cu2Si surface silicide

Hervé Ménard; Andrew B. Horn; Steven P. Tear

doi:10.1016/j.susc.2005.04.008

Methylsilane on Cu(1 1 1), a STM study of the (√3×√3) R30°-Cu2Si surface silicide

Hervé Ménard, Andrew B. Horn, Steven P. Tear

Research output: Contribution to journal › Article › peer-review

Abstract

Scanning tunnelling microscopy has been used to investigate the surface structure of the (3×3)R30°-Cu2Si surface silicide formed on Cu(1 1 1) after adsorption of methylsilane at 595 K. The STM images have shown the presence of a domain wall network on the surface, in the form of a 0.1 Å variation in height on the lateral scale of a minimum of 26 Å. The interpretation of the STM images has indicated that the areas between the domains walls are associated with silicon and copper atoms both residing in either fcc or hcp three-fold hollow sites, whilst the domain wall is a result of an abrupt change enhanced with some electronic contribution. © 2005 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	47-52
Number of pages	5
Journal	Surface Science
Volume	585
Issue number	1-2
DOIs	https://doi.org/10.1016/j.susc.2005.04.008
Publication status	Published - 1 Jul 2005

Keywords

Compound formation
Copper
Low index single crystal surfaces
Scanning tunnelling microscopy
Silicides
Surface structure, morphology, roughness, and topography

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10.1016/j.susc.2005.04.008

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title = "Methylsilane on Cu(1 1 1), a STM study of the (√3×√3) R30°-Cu2Si surface silicide",

abstract = "Scanning tunnelling microscopy has been used to investigate the surface structure of the (3×3)R30°-Cu2Si surface silicide formed on Cu(1 1 1) after adsorption of methylsilane at 595 K. The STM images have shown the presence of a domain wall network on the surface, in the form of a 0.1 {\AA} variation in height on the lateral scale of a minimum of 26 {\AA}. The interpretation of the STM images has indicated that the areas between the domains walls are associated with silicon and copper atoms both residing in either fcc or hcp three-fold hollow sites, whilst the domain wall is a result of an abrupt change enhanced with some electronic contribution. {\textcopyright} 2005 Elsevier B.V. All rights reserved.",

keywords = "Compound formation, Copper, Low index single crystal surfaces, Scanning tunnelling microscopy, Silicides, Surface structure, morphology, roughness, and topography",

author = "Herv{\'e} M{\'e}nard and Horn, \{Andrew B.\} and Tear, \{Steven P.\}",

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doi = "10.1016/j.susc.2005.04.008",

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T1 - Methylsilane on Cu(1 1 1), a STM study of the (√3×√3) R30°-Cu2Si surface silicide

AU - Ménard, Hervé

AU - Horn, Andrew B.

AU - Tear, Steven P.

PY - 2005/7/1

Y1 - 2005/7/1

N2 - Scanning tunnelling microscopy has been used to investigate the surface structure of the (3×3)R30°-Cu2Si surface silicide formed on Cu(1 1 1) after adsorption of methylsilane at 595 K. The STM images have shown the presence of a domain wall network on the surface, in the form of a 0.1 Å variation in height on the lateral scale of a minimum of 26 Å. The interpretation of the STM images has indicated that the areas between the domains walls are associated with silicon and copper atoms both residing in either fcc or hcp three-fold hollow sites, whilst the domain wall is a result of an abrupt change enhanced with some electronic contribution. © 2005 Elsevier B.V. All rights reserved.

AB - Scanning tunnelling microscopy has been used to investigate the surface structure of the (3×3)R30°-Cu2Si surface silicide formed on Cu(1 1 1) after adsorption of methylsilane at 595 K. The STM images have shown the presence of a domain wall network on the surface, in the form of a 0.1 Å variation in height on the lateral scale of a minimum of 26 Å. The interpretation of the STM images has indicated that the areas between the domains walls are associated with silicon and copper atoms both residing in either fcc or hcp three-fold hollow sites, whilst the domain wall is a result of an abrupt change enhanced with some electronic contribution. © 2005 Elsevier B.V. All rights reserved.

KW - Compound formation

KW - Copper

KW - Low index single crystal surfaces

KW - Scanning tunnelling microscopy

KW - Silicides

KW - Surface structure, morphology, roughness, and topography

UR - https://www.scopus.com/pages/publications/20044368087

U2 - 10.1016/j.susc.2005.04.008

DO - 10.1016/j.susc.2005.04.008

M3 - Article

SN - 0039-6028

VL - 585

SP - 47

EP - 52

JO - Surface Science

JF - Surface Science

IS - 1-2

ER -

Methylsilane on Cu(1 1 1), a STM study of the (√3×√3) R30°-Cu2Si surface silicide

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Keywords

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