Microwave power detector based on a single MOSFET in standard technology

Giorgio Ferrari; Enrico Prati; Laura Fumagalli; Marco Sampietro; Marco Fanciulli

doi:10.1109/EUMC.2005.1610150

Microwave power detector based on a single MOSFET in standard technology

Giorgio Ferrari, Enrico Prati, Laura Fumagalli, Marco Sampietro, Marco Fanciulli

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A microwave power detector based on a single metal-oxide-semiconductor field effect transistor (MOSFET) fully compatible with standard CMOS process is presented. The detector uses the non-linearity of the channel resistance of a MOSFET operating in ohmic regime to rectify the microwave signal. A first prototype shows a sensitivity below mW and a good linearity over at least two decades of microwave power. The absence of additional technological steps required for the detector fabrication with respect to a standard CMOS process opens the realm of RF power monitoring in products at virtually no cost.

Original language	English
Title of host publication	The 35th European Microwave Conference
Subtitle of host publication	Conference Proceedings
Place of Publication	Paris, France
Pages	1207-1210
Number of pages	4
Volume	2
DOIs	https://doi.org/10.1109/EUMC.2005.1610150
Publication status	Published - 1 Dec 2005
Event	2005 European Microwave Conference - Paris, France Duration: 4 Oct 2005 → 6 Oct 2005

Conference

Conference	2005 European Microwave Conference
Country/Territory	France
City	Paris
Period	4/10/05 → 6/10/05

Keywords

CMOS integrated circuits
Control nonlinearities
Microwave power transmission
Signal detection

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10.1109/EUMC.2005.1610150

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title = "Microwave power detector based on a single MOSFET in standard technology",

abstract = "A microwave power detector based on a single metal-oxide-semiconductor field effect transistor (MOSFET) fully compatible with standard CMOS process is presented. The detector uses the non-linearity of the channel resistance of a MOSFET operating in ohmic regime to rectify the microwave signal. A first prototype shows a sensitivity below mW and a good linearity over at least two decades of microwave power. The absence of additional technological steps required for the detector fabrication with respect to a standard CMOS process opens the realm of RF power monitoring in products at virtually no cost.",

keywords = "CMOS integrated circuits, Control nonlinearities, Microwave power transmission, Signal detection",

author = "Giorgio Ferrari and Enrico Prati and Laura Fumagalli and Marco Sampietro and Marco Fanciulli",

year = "2005",

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doi = "10.1109/EUMC.2005.1610150",

language = "English",

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T1 - Microwave power detector based on a single MOSFET in standard technology

AU - Ferrari, Giorgio

AU - Prati, Enrico

AU - Fumagalli, Laura

AU - Sampietro, Marco

AU - Fanciulli, Marco

PY - 2005/12/1

Y1 - 2005/12/1

N2 - A microwave power detector based on a single metal-oxide-semiconductor field effect transistor (MOSFET) fully compatible with standard CMOS process is presented. The detector uses the non-linearity of the channel resistance of a MOSFET operating in ohmic regime to rectify the microwave signal. A first prototype shows a sensitivity below mW and a good linearity over at least two decades of microwave power. The absence of additional technological steps required for the detector fabrication with respect to a standard CMOS process opens the realm of RF power monitoring in products at virtually no cost.

AB - A microwave power detector based on a single metal-oxide-semiconductor field effect transistor (MOSFET) fully compatible with standard CMOS process is presented. The detector uses the non-linearity of the channel resistance of a MOSFET operating in ohmic regime to rectify the microwave signal. A first prototype shows a sensitivity below mW and a good linearity over at least two decades of microwave power. The absence of additional technological steps required for the detector fabrication with respect to a standard CMOS process opens the realm of RF power monitoring in products at virtually no cost.

KW - CMOS integrated circuits

KW - Control nonlinearities

KW - Microwave power transmission

KW - Signal detection

UR - http://www.scopus.com/inward/record.url?scp=33847111721&partnerID=8YFLogxK

U2 - 10.1109/EUMC.2005.1610150

DO - 10.1109/EUMC.2005.1610150

M3 - Conference contribution

AN - SCOPUS:33847111721

SN - 2960055128

SN - 9782960055122

VL - 2

SP - 1207

EP - 1210

BT - The 35th European Microwave Conference

CY - Paris, France

T2 - 2005 European Microwave Conference

Y2 - 4 October 2005 through 6 October 2005

ER -

Microwave power detector based on a single MOSFET in standard technology

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Keywords

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