Mobility in graphene double gate field effect transistors

M. C. Lemme; T. J. Echtermeyer; M. Baus; B. N. Szafranek; J. Bolten; M. Schmidt; T. Wahlbrink; H. Kurz

doi:10.1016/j.sse.2007.10.054

Mobility in graphene double gate field effect transistors

M. C. Lemme, T. J. Echtermeyer, M. Baus, B. N. Szafranek, J. Bolten, M. Schmidt, T. Wahlbrink, H. Kurz

Research output: Contribution to journal › Article › peer-review

Abstract

In this work, double-gated field effect transistors manufactured from monolayer graphene are investigated. Conventional top-down CMOS-compatible processes are applied except for graphene deposition by manual exfoliation. Carrier mobilities in single- and double-gated graphene field effect transistors are compared. Even in double-gated graphene FETs, the carrier mobility exceeds the universal mobility of silicon over nearly the entire measured range. At comparable dimensions, reported mobilities for ultra-thin body silicon-on-insulator MOSFETs cannot compete with graphene FET values. © 2007 Elsevier Ltd. All rights reserved.

Original language	English
Pages (from-to)	514-518
Number of pages	4
Journal	Solid State Electronics
Volume	52
Issue number	4
DOIs	https://doi.org/10.1016/j.sse.2007.10.054
Publication status	Published - Apr 2008

Keywords

Field effect transistor
Graphene
Mobility
SOI

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10.1016/j.sse.2007.10.054

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title = "Mobility in graphene double gate field effect transistors",

abstract = "In this work, double-gated field effect transistors manufactured from monolayer graphene are investigated. Conventional top-down CMOS-compatible processes are applied except for graphene deposition by manual exfoliation. Carrier mobilities in single- and double-gated graphene field effect transistors are compared. Even in double-gated graphene FETs, the carrier mobility exceeds the universal mobility of silicon over nearly the entire measured range. At comparable dimensions, reported mobilities for ultra-thin body silicon-on-insulator MOSFETs cannot compete with graphene FET values. {\textcopyright} 2007 Elsevier Ltd. All rights reserved.",

keywords = "Field effect transistor, Graphene, Mobility, SOI",

author = "Lemme, {M. C.} and Echtermeyer, {T. J.} and M. Baus and Szafranek, {B. N.} and J. Bolten and M. Schmidt and T. Wahlbrink and H. Kurz",

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AU - Lemme, M. C.

AU - Echtermeyer, T. J.

AU - Baus, M.

AU - Szafranek, B. N.

AU - Bolten, J.

AU - Schmidt, M.

AU - Wahlbrink, T.

AU - Kurz, H.

PY - 2008/4

Y1 - 2008/4

N2 - In this work, double-gated field effect transistors manufactured from monolayer graphene are investigated. Conventional top-down CMOS-compatible processes are applied except for graphene deposition by manual exfoliation. Carrier mobilities in single- and double-gated graphene field effect transistors are compared. Even in double-gated graphene FETs, the carrier mobility exceeds the universal mobility of silicon over nearly the entire measured range. At comparable dimensions, reported mobilities for ultra-thin body silicon-on-insulator MOSFETs cannot compete with graphene FET values. © 2007 Elsevier Ltd. All rights reserved.

AB - In this work, double-gated field effect transistors manufactured from monolayer graphene are investigated. Conventional top-down CMOS-compatible processes are applied except for graphene deposition by manual exfoliation. Carrier mobilities in single- and double-gated graphene field effect transistors are compared. Even in double-gated graphene FETs, the carrier mobility exceeds the universal mobility of silicon over nearly the entire measured range. At comparable dimensions, reported mobilities for ultra-thin body silicon-on-insulator MOSFETs cannot compete with graphene FET values. © 2007 Elsevier Ltd. All rights reserved.

KW - Field effect transistor

KW - Graphene

KW - Mobility

KW - SOI

U2 - 10.1016/j.sse.2007.10.054

DO - 10.1016/j.sse.2007.10.054

M3 - Article

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VL - 52

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EP - 518

JO - Solid State Electronics

JF - Solid State Electronics

IS - 4

ER -

Mobility in graphene double gate field effect transistors

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Keywords

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