Modeling of high gain and μW level power consumption resonant tunneling diode based amplifiers

Saad Muttlak, Omar Abdulwahid, James Sexton, Mohamed Missous

    Research output: Contribution to conferencePaperpeer-review

    Abstract

    Modeling and theoretically analyzing of a novel K-band reflection based amplifier was performed utilizing the unique negative differential resistance (NDR) feature of an InGaAs/AlAs RTD. A 2.4 μm2 mesa area device was fabricated and measured and on-wafer probe S-parameter measurements up to 40 GHz were carried out. Verification of the diode's equivalent circuit was experimentally validated and then employed to realize a K-band reflection based amplifier. The model was built in advanced design system software including a lumped element branch coupler with two active loads RTDs. Due to constructively combining the in-phase electromagnetic waves at the amplifier's output port, a high gain of 32 dB was achieved at 25.3 GHz while maintaining a very low DC power consumption of 100 μW. This corresponds to a record figure of merit of 320dB/mW to date, validating the excellent performance of the amplifier.
    Original languageEnglish
    DOIs
    Publication statusPublished - 11 Sept 2017
    Event2017 10th UK-Europe-China Workshop on Millimetre Waves and Terahertz Technologies (UCMMT) - University of Liverpool, Liverpool, United Kingdom
    Duration: 11 Sept 201813 Sept 2018
    https://www.ieee-ukandireland.org/event/uk-europe-china-workshop-on-millimetre-waves-and-terahertz-technologies/

    Conference

    Conference2017 10th UK-Europe-China Workshop on Millimetre Waves and Terahertz Technologies (UCMMT)
    Country/TerritoryUnited Kingdom
    CityLiverpool
    Period11/09/1813/09/18
    Internet address

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