Modeling of high gain and μW level power consumption resonant tunneling diode based amplifiers

Saad Muttlak; Omar Abdulwahid; James Sexton; Mohamed Missous

doi:10.1109/UCMMT.2017.8068351

Modeling of high gain and μW level power consumption resonant tunneling diode based amplifiers

Saad Muttlak, Omar Abdulwahid, James Sexton, Mohamed Missous

Research output: Contribution to conference › Paper › peer-review

Abstract

Modeling and theoretically analyzing of a novel K-band reflection based amplifier was performed utilizing the unique negative differential resistance (NDR) feature of an InGaAs/AlAs RTD. A 2.4 μm2 mesa area device was fabricated and measured and on-wafer probe S-parameter measurements up to 40 GHz were carried out. Verification of the diode's equivalent circuit was experimentally validated and then employed to realize a K-band reflection based amplifier. The model was built in advanced design system software including a lumped element branch coupler with two active loads RTDs. Due to constructively combining the in-phase electromagnetic waves at the amplifier's output port, a high gain of 32 dB was achieved at 25.3 GHz while maintaining a very low DC power consumption of 100 μW. This corresponds to a record figure of merit of 320dB/mW to date, validating the excellent performance of the amplifier.

Original language	English
DOIs	https://doi.org/10.1109/UCMMT.2017.8068351
Publication status	Published - 11 Sept 2017
Event	2017 10th UK-Europe-China Workshop on Millimetre Waves and Terahertz Technologies (UCMMT) - University of Liverpool, Liverpool, United Kingdom Duration: 11 Sept 2018 → 13 Sept 2018 https://www.ieee-ukandireland.org/event/uk-europe-china-workshop-on-millimetre-waves-and-terahertz-technologies/

Conference

Conference	2017 10th UK-Europe-China Workshop on Millimetre Waves and Terahertz Technologies (UCMMT)
Country/Territory	United Kingdom
City	Liverpool
Period	11/09/18 → 13/09/18
Internet address	https://www.ieee-ukandireland.org/event/uk-europe-china-workshop-on-millimetre-waves-and-terahertz-technologies/

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10.1109/UCMMT.2017.8068351

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title = "Modeling of high gain and μW level power consumption resonant tunneling diode based amplifiers",

abstract = "Modeling and theoretically analyzing of a novel K-band reflection based amplifier was performed utilizing the unique negative differential resistance (NDR) feature of an InGaAs/AlAs RTD. A 2.4 μm2 mesa area device was fabricated and measured and on-wafer probe S-parameter measurements up to 40 GHz were carried out. Verification of the diode's equivalent circuit was experimentally validated and then employed to realize a K-band reflection based amplifier. The model was built in advanced design system software including a lumped element branch coupler with two active loads RTDs. Due to constructively combining the in-phase electromagnetic waves at the amplifier's output port, a high gain of 32 dB was achieved at 25.3 GHz while maintaining a very low DC power consumption of 100 μW. This corresponds to a record figure of merit of 320dB/mW to date, validating the excellent performance of the amplifier.",

author = "Saad Muttlak and Omar Abdulwahid and James Sexton and Mohamed Missous",

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doi = "10.1109/UCMMT.2017.8068351",

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T1 - Modeling of high gain and μW level power consumption resonant tunneling diode based amplifiers

AU - Muttlak, Saad

AU - Abdulwahid, Omar

AU - Sexton, James

AU - Missous, Mohamed

PY - 2017/9/11

Y1 - 2017/9/11

N2 - Modeling and theoretically analyzing of a novel K-band reflection based amplifier was performed utilizing the unique negative differential resistance (NDR) feature of an InGaAs/AlAs RTD. A 2.4 μm2 mesa area device was fabricated and measured and on-wafer probe S-parameter measurements up to 40 GHz were carried out. Verification of the diode's equivalent circuit was experimentally validated and then employed to realize a K-band reflection based amplifier. The model was built in advanced design system software including a lumped element branch coupler with two active loads RTDs. Due to constructively combining the in-phase electromagnetic waves at the amplifier's output port, a high gain of 32 dB was achieved at 25.3 GHz while maintaining a very low DC power consumption of 100 μW. This corresponds to a record figure of merit of 320dB/mW to date, validating the excellent performance of the amplifier.

AB - Modeling and theoretically analyzing of a novel K-band reflection based amplifier was performed utilizing the unique negative differential resistance (NDR) feature of an InGaAs/AlAs RTD. A 2.4 μm2 mesa area device was fabricated and measured and on-wafer probe S-parameter measurements up to 40 GHz were carried out. Verification of the diode's equivalent circuit was experimentally validated and then employed to realize a K-band reflection based amplifier. The model was built in advanced design system software including a lumped element branch coupler with two active loads RTDs. Due to constructively combining the in-phase electromagnetic waves at the amplifier's output port, a high gain of 32 dB was achieved at 25.3 GHz while maintaining a very low DC power consumption of 100 μW. This corresponds to a record figure of merit of 320dB/mW to date, validating the excellent performance of the amplifier.

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DO - 10.1109/UCMMT.2017.8068351

M3 - Paper

T2 - 2017 10th UK-Europe-China Workshop on Millimetre Waves and Terahertz Technologies (UCMMT)

Y2 - 11 September 2018 through 13 September 2018

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Modeling of high gain and μW level power consumption resonant tunneling diode based amplifiers

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