Modelling and simulation of low-frequency broadband LNA using InGaAs/InAlAs structures: A new approach

B. Boudjelida; A. Sobih; A. Bouloukou; S. Boulay; S. Arshad; J. Sly; M. Missous

doi:10.1016/j.mssp.2008.07.013

Modelling and simulation of low-frequency broadband LNA using InGaAs/InAlAs structures: A new approach

B. Boudjelida^*, A. Sobih, A. Bouloukou, S. Boulay, S. Arshad, J. Sly, M. Missous

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

The ultra-low leakage properties of a novel InGaAs/InAlAs/InP structure have been used to fabricate large gate periphery pHEMTs (up to 1200 μm²) required for wide band low-noise amplifiers (LNA). The devices were characterized and both linear and non-linear models were extracted. LNAs were then designed and compared favourably with the best results reported to date between 0.3 and 2 GHz, still using a 1 μm gate length optical lithography. Crown

Original language	English
Pages (from-to)	398-401
Number of pages	4
Journal	Materials science in semiconductor processing
Volume	11
Issue number	5-6
DOIs	https://doi.org/10.1016/j.mssp.2008.07.013
Publication status	Published - 1 Oct 2008

Keywords

InGaAs/InAlAs/InP
Low leakage
Low-noise amplifier
PHEMT
Radio astronomy
SKA

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10.1016/j.mssp.2008.07.013

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@article{7ebc78b355174118bd146734a7241858,

title = "Modelling and simulation of low-frequency broadband LNA using InGaAs/InAlAs structures: A new approach",

abstract = "The ultra-low leakage properties of a novel InGaAs/InAlAs/InP structure have been used to fabricate large gate periphery pHEMTs (up to 1200 μm2) required for wide band low-noise amplifiers (LNA). The devices were characterized and both linear and non-linear models were extracted. LNAs were then designed and compared favourably with the best results reported to date between 0.3 and 2 GHz, still using a 1 μm gate length optical lithography. Crown",

keywords = "InGaAs/InAlAs/InP, Low leakage, Low-noise amplifier, PHEMT, Radio astronomy, SKA",

author = "B. Boudjelida and A. Sobih and A. Bouloukou and S. Boulay and S. Arshad and J. Sly and M. Missous",

year = "2008",

month = oct,

day = "1",

doi = "10.1016/j.mssp.2008.07.013",

language = "English",

volume = "11",

pages = "398--401",

journal = "Materials science in semiconductor processing",

issn = "1369-8001",

publisher = "Elsevier BV",

number = "5-6",

}

TY - JOUR

T1 - Modelling and simulation of low-frequency broadband LNA using InGaAs/InAlAs structures

T2 - A new approach

AU - Boudjelida, B.

AU - Sobih, A.

AU - Bouloukou, A.

AU - Boulay, S.

AU - Arshad, S.

AU - Sly, J.

AU - Missous, M.

PY - 2008/10/1

Y1 - 2008/10/1

N2 - The ultra-low leakage properties of a novel InGaAs/InAlAs/InP structure have been used to fabricate large gate periphery pHEMTs (up to 1200 μm2) required for wide band low-noise amplifiers (LNA). The devices were characterized and both linear and non-linear models were extracted. LNAs were then designed and compared favourably with the best results reported to date between 0.3 and 2 GHz, still using a 1 μm gate length optical lithography. Crown

AB - The ultra-low leakage properties of a novel InGaAs/InAlAs/InP structure have been used to fabricate large gate periphery pHEMTs (up to 1200 μm2) required for wide band low-noise amplifiers (LNA). The devices were characterized and both linear and non-linear models were extracted. LNAs were then designed and compared favourably with the best results reported to date between 0.3 and 2 GHz, still using a 1 μm gate length optical lithography. Crown

KW - InGaAs/InAlAs/InP

KW - Low leakage

KW - Low-noise amplifier

KW - PHEMT

KW - Radio astronomy

KW - SKA

UR - http://www.scopus.com/inward/record.url?scp=70349759985&partnerID=8YFLogxK

U2 - 10.1016/j.mssp.2008.07.013

DO - 10.1016/j.mssp.2008.07.013

M3 - Article

AN - SCOPUS:70349759985

SN - 1369-8001

VL - 11

SP - 398

EP - 401

JO - Materials science in semiconductor processing

JF - Materials science in semiconductor processing

IS - 5-6

ER -

Modelling and simulation of low-frequency broadband LNA using InGaAs/InAlAs structures: A new approach

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Keywords

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