Modulation of magnon spin transport in a magnetic gate transistor

K. S.  Das; F. Feringa; M. Middelkamp; B. J. Van Wees; Ivan J. Vera-Marun

Modulation of magnon spin transport in a magnetic gate transistor

K. S. Das, F. Feringa, M. Middelkamp, B. J. Van Wees, Ivan J. Vera-Marun

Condensed Matter Physics Group

Research output: Contribution to journal › Article › peer-review

Abstract

We demonstrate a modulation of up to 18% in the magnon spin transport in a magnetic insulator (Y3Fe5O12, YIG) using a common ferromagnetic metal (permalloy, Py) as a magnetic control gate. A Py electrode, placed between two Pt injector and detector electrodes, acts as a magnetic gate in our prototypical magnon transistor device. By manipulating the magnetization direction of Py with respect to that of YIG, the transmission of magnons through the PyjYIG interface can be controlled, resulting in a modulation of the non-equilibrium magnon density in the YIG channel between the Pt injector and detector electrodes. This study opens up the possibility of using the magnetic gating effect for magnon-based spin logic applications.

Original language	English
Journal	Physical Review B
Publication status	Accepted/In press - 30 Jan 2020

Embargoed Document

LH17285B
Accepted author manuscript, 3.97 MB
Embargo ends: 1/01/30

2 Invited talk
1 Oral presentation

From Spin-Orbitronic Effects to Transistors
Vera Marun, I. (Speaker)
7 Jun 2021 → 9 Jun 2021
Activity: Talk or presentation › Oral presentation › Research
From novel spin-orbitronics effects to transistor devices
Ivan Vera Marun (Invited speaker)
19 May 2021
Activity: Talk or presentation › Invited talk › Research
Explorations on magnon spintronics: from novel spin-orbitronics effects to transistor devices
Vera Marun, I. (Invited speaker)
20 Jul 2020
Activity: Talk or presentation › Invited talk › Research

Cite this

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title = "Modulation of magnon spin transport in a magnetic gate transistor",

abstract = "We demonstrate a modulation of up to 18% in the magnon spin transport in a magnetic insulator (Y3Fe5O12, YIG) using a common ferromagnetic metal (permalloy, Py) as a magnetic control gate. A Py electrode, placed between two Pt injector and detector electrodes, acts as a magnetic gate in our prototypical magnon transistor device. By manipulating the magnetization direction of Py with respect to that of YIG, the transmission of magnons through the PyjYIG interface can be controlled, resulting in a modulation of the non-equilibrium magnon density in the YIG channel between the Pt injector and detector electrodes. This study opens up the possibility of using the magnetic gating effect for magnon-based spin logic applications.",

author = "Das, {K. S.} and F. Feringa and M. Middelkamp and {Van Wees}, {B. J.} and Vera-Marun, {Ivan J.}",

year = "2020",

month = jan,

day = "30",

language = "English",

journal = "Physical Review B",

issn = "2469-9969",

publisher = "American Physical Society",

}

TY - JOUR

T1 - Modulation of magnon spin transport in a magnetic gate transistor

AU - Das, K. S.

AU - Feringa, F.

AU - Middelkamp, M.

AU - Van Wees, B. J.

AU - Vera-Marun, Ivan J.

PY - 2020/1/30

Y1 - 2020/1/30

N2 - We demonstrate a modulation of up to 18% in the magnon spin transport in a magnetic insulator (Y3Fe5O12, YIG) using a common ferromagnetic metal (permalloy, Py) as a magnetic control gate. A Py electrode, placed between two Pt injector and detector electrodes, acts as a magnetic gate in our prototypical magnon transistor device. By manipulating the magnetization direction of Py with respect to that of YIG, the transmission of magnons through the PyjYIG interface can be controlled, resulting in a modulation of the non-equilibrium magnon density in the YIG channel between the Pt injector and detector electrodes. This study opens up the possibility of using the magnetic gating effect for magnon-based spin logic applications.

AB - We demonstrate a modulation of up to 18% in the magnon spin transport in a magnetic insulator (Y3Fe5O12, YIG) using a common ferromagnetic metal (permalloy, Py) as a magnetic control gate. A Py electrode, placed between two Pt injector and detector electrodes, acts as a magnetic gate in our prototypical magnon transistor device. By manipulating the magnetization direction of Py with respect to that of YIG, the transmission of magnons through the PyjYIG interface can be controlled, resulting in a modulation of the non-equilibrium magnon density in the YIG channel between the Pt injector and detector electrodes. This study opens up the possibility of using the magnetic gating effect for magnon-based spin logic applications.

M3 - Article

SN - 2469-9969

JO - Physical Review B

JF - Physical Review B

ER -

Modulation of magnon spin transport in a magnetic gate transistor

Abstract

Embargoed Document

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Activities

From Spin-Orbitronic Effects to Transistors

From novel spin-orbitronics effects to transistor devices

Explorations on magnon spintronics: from novel spin-orbitronics effects to transistor devices

Cite this