Abstract
We present comprehensive Raman spectra for thin films of Alq 3, annealed at various temperatures up to 300°C, over the range of 70-1800 cm -1. These spectra give strong evidence for structural rearrangement of thin films of Alq 3 upon annealing at temperatures above 200°C. Needle like crystals are observed to grow in the films and confirmed to be comprised of the α-Alq 3 polymorph using the low energy Raman spectra. Furthermore, no evidence of the fac isomer or thermal interconversion between the mer and fac isomers of Alq 3 was observed in either the infrared or Raman spectra of the thin films or powder. These results may have implications for the long-term efficiencies of organic light emitting diodes incorporating thin films of Alq 3.
| Original language | English |
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| Pages (from-to) | 1902-1905 |
| Number of pages | 4 |
| Journal | Journal of Applied Physics |
| Volume | 92 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 15 Aug 2002 |