Multicolour infrared detection with In0.1Ga0.9As / Al0.33Ga0.67As double and triple-coupled quantum well infrared photodetectors

A. J. Stead; M. Missous

Multicolour infrared detection with In_0.1Ga_0.9As / Al_0.33Ga_0.67As double and triple-coupled quantum well infrared photodetectors

A. J. Stead^*, M. Missous

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

Abstract

Two structures, designed to detect two and three infrared colours using coupled quantum wells in the are demonstrated. Both structures were initially grown without contacts on double-sided substrates to facilitate infrared absorption measurements. The 'two-colour' sample shows absorption at 7.4μm and 9.1μm, whereas the 'three-colour' sample shows absorption at 6.25μm, 9.5μm and 12.8μm. To our knowledge this is the first time coupled quantum wells of the same composition have been used to detect multiple colours. Samples were then grown with contact layers to facilitate photoresponse measurements. Current-voltage and black body responsivity measurements are presented for these devices.

Original language	English
Pages	119-124
Number of pages	6
Publication status	Published - 1 Dec 1999
Event	7th International Symposium on 'High Performance Electron Devices for Microwave and Optoelectronic Applications' (EDMO'99) - London, UK Duration: 22 Nov 1999 → 23 Nov 1999

Conference

Conference	7th International Symposium on 'High Performance Electron Devices for Microwave and Optoelectronic Applications' (EDMO'99)
City	London, UK
Period	22/11/99 → 23/11/99

Cite this

@conference{678d8ef3586e4b9f8f8ca7af33d08cf5,

title = "Multicolour infrared detection with In0.1Ga0.9As / Al0.33Ga0.67As double and triple-coupled quantum well infrared photodetectors",

abstract = "Two structures, designed to detect two and three infrared colours using coupled quantum wells in the are demonstrated. Both structures were initially grown without contacts on double-sided substrates to facilitate infrared absorption measurements. The 'two-colour' sample shows absorption at 7.4μm and 9.1μm, whereas the 'three-colour' sample shows absorption at 6.25μm, 9.5μm and 12.8μm. To our knowledge this is the first time coupled quantum wells of the same composition have been used to detect multiple colours. Samples were then grown with contact layers to facilitate photoresponse measurements. Current-voltage and black body responsivity measurements are presented for these devices.",

author = "Stead, {A. J.} and M. Missous",

year = "1999",

month = dec,

day = "1",

language = "English",

pages = "119--124",

note = "7th International Symposium on 'High Performance Electron Devices for Microwave and Optoelectronic Applications' (EDMO'99) ; Conference date: 22-11-1999 Through 23-11-1999",

}

Multicolour infrared detection with In_0.1Ga_0.9As / Al_0.33Ga_0.67As double and triple-coupled quantum well infrared photodetectors. / Stead, A. J.; Missous, M.
1999. 119-124 Paper presented at 7th International Symposium on 'High Performance Electron Devices for Microwave and Optoelectronic Applications' (EDMO'99), London, UK.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Multicolour infrared detection with In0.1Ga0.9As / Al0.33Ga0.67As double and triple-coupled quantum well infrared photodetectors

AU - Stead, A. J.

AU - Missous, M.

PY - 1999/12/1

Y1 - 1999/12/1

N2 - Two structures, designed to detect two and three infrared colours using coupled quantum wells in the are demonstrated. Both structures were initially grown without contacts on double-sided substrates to facilitate infrared absorption measurements. The 'two-colour' sample shows absorption at 7.4μm and 9.1μm, whereas the 'three-colour' sample shows absorption at 6.25μm, 9.5μm and 12.8μm. To our knowledge this is the first time coupled quantum wells of the same composition have been used to detect multiple colours. Samples were then grown with contact layers to facilitate photoresponse measurements. Current-voltage and black body responsivity measurements are presented for these devices.

AB - Two structures, designed to detect two and three infrared colours using coupled quantum wells in the are demonstrated. Both structures were initially grown without contacts on double-sided substrates to facilitate infrared absorption measurements. The 'two-colour' sample shows absorption at 7.4μm and 9.1μm, whereas the 'three-colour' sample shows absorption at 6.25μm, 9.5μm and 12.8μm. To our knowledge this is the first time coupled quantum wells of the same composition have been used to detect multiple colours. Samples were then grown with contact layers to facilitate photoresponse measurements. Current-voltage and black body responsivity measurements are presented for these devices.

UR - http://www.scopus.com/inward/record.url?scp=0033352597&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0033352597

SP - 119

EP - 124

T2 - 7th International Symposium on 'High Performance Electron Devices for Microwave and Optoelectronic Applications' (EDMO'99)

Y2 - 22 November 1999 through 23 November 1999

ER -

Multicolour infrared detection with In_0.1Ga_0.9As / Al_0.33Ga_0.67As double and triple-coupled quantum well infrared photodetectors

Abstract

Conference

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