N-type chalcogenides by ion implantation

Mark A. Hughes; Yanina Fedorenko; Behrad Gholipour; Jin Yao; Tae Hoon Lee; Russell M Gwilliam; Kevin P. Homewood; Steven Hinder; Daniel W. Hewak; Stephen R. Elliott; Richard J. Curry

doi:10.1038/ncomms6346

N-type chalcogenides by ion implantation

Mark A. Hughes, Yanina Fedorenko, Behrad Gholipour, Jin Yao, Tae Hoon Lee, Russell M Gwilliam, Kevin P. Homewood, Steven Hinder, Daniel W. Hewak, Stephen R. Elliott, Richard J. Curry^*

^*Corresponding author for this work

Alliance Manchester Business School

Research output: Contribution to journal › Article › peer-review

Abstract

Carrier-type reversal to enable the formation of semiconductor p-n junctions is a prerequisite for many electronic applications. Chalcogenide glasses are p-type semiconductors and their applications have been limited by the extraordinary difficulty in obtaining n-type conductivity. The ability to form chalcogenide glass p-n junctions could improve the performance of phase-change memory and thermoelectric devices and allow the direct electronic control of nonlinear optical devices. Previously, carrier-type reversal has been restricted to the GeCh (Ch=S, Se, Te) family of glasses, with very high Bi or Pb 'doping' concentrations (∼5-11 at.%), incorporated during higherature glass melting. Here we report the first n-type doping of chalcogenide glasses by ion implantation of Bi into GeTe and GaLaSO amorphous films, demonstrating rectification and photocurrent in a Bi-implanted GaLaSO device. The electrical doping effect of Bi is observed at a 100 times lower concentration than for Bi melt-doped GeCh glasses.

Original language	English
Article number	5346
Journal	Nature Communications
Volume	5
DOIs	https://doi.org/10.1038/ncomms6346
Publication status	Published - 7 Nov 2014

Access to Document

10.1038/ncomms6346

Cite this

@article{b069998505004914be17560521545990,

title = "N-type chalcogenides by ion implantation",

abstract = "Carrier-type reversal to enable the formation of semiconductor p-n junctions is a prerequisite for many electronic applications. Chalcogenide glasses are p-type semiconductors and their applications have been limited by the extraordinary difficulty in obtaining n-type conductivity. The ability to form chalcogenide glass p-n junctions could improve the performance of phase-change memory and thermoelectric devices and allow the direct electronic control of nonlinear optical devices. Previously, carrier-type reversal has been restricted to the GeCh (Ch=S, Se, Te) family of glasses, with very high Bi or Pb 'doping' concentrations (∼5-11 at.%), incorporated during higherature glass melting. Here we report the first n-type doping of chalcogenide glasses by ion implantation of Bi into GeTe and GaLaSO amorphous films, demonstrating rectification and photocurrent in a Bi-implanted GaLaSO device. The electrical doping effect of Bi is observed at a 100 times lower concentration than for Bi melt-doped GeCh glasses.",

author = "Hughes, {Mark A.} and Yanina Fedorenko and Behrad Gholipour and Jin Yao and Lee, {Tae Hoon} and Gwilliam, {Russell M} and Homewood, {Kevin P.} and Steven Hinder and Hewak, {Daniel W.} and Elliott, {Stephen R.} and Curry, {Richard J.}",

year = "2014",

month = nov,

day = "7",

doi = "10.1038/ncomms6346",

language = "English",

volume = "5",

journal = "Nature Communications",

issn = "2041-1723",

publisher = "Nature Research",

}

TY - JOUR

T1 - N-type chalcogenides by ion implantation

AU - Hughes, Mark A.

AU - Fedorenko, Yanina

AU - Gholipour, Behrad

AU - Yao, Jin

AU - Lee, Tae Hoon

AU - Gwilliam, Russell M

AU - Homewood, Kevin P.

AU - Hinder, Steven

AU - Hewak, Daniel W.

AU - Elliott, Stephen R.

AU - Curry, Richard J.

PY - 2014/11/7

Y1 - 2014/11/7

N2 - Carrier-type reversal to enable the formation of semiconductor p-n junctions is a prerequisite for many electronic applications. Chalcogenide glasses are p-type semiconductors and their applications have been limited by the extraordinary difficulty in obtaining n-type conductivity. The ability to form chalcogenide glass p-n junctions could improve the performance of phase-change memory and thermoelectric devices and allow the direct electronic control of nonlinear optical devices. Previously, carrier-type reversal has been restricted to the GeCh (Ch=S, Se, Te) family of glasses, with very high Bi or Pb 'doping' concentrations (∼5-11 at.%), incorporated during higherature glass melting. Here we report the first n-type doping of chalcogenide glasses by ion implantation of Bi into GeTe and GaLaSO amorphous films, demonstrating rectification and photocurrent in a Bi-implanted GaLaSO device. The electrical doping effect of Bi is observed at a 100 times lower concentration than for Bi melt-doped GeCh glasses.

AB - Carrier-type reversal to enable the formation of semiconductor p-n junctions is a prerequisite for many electronic applications. Chalcogenide glasses are p-type semiconductors and their applications have been limited by the extraordinary difficulty in obtaining n-type conductivity. The ability to form chalcogenide glass p-n junctions could improve the performance of phase-change memory and thermoelectric devices and allow the direct electronic control of nonlinear optical devices. Previously, carrier-type reversal has been restricted to the GeCh (Ch=S, Se, Te) family of glasses, with very high Bi or Pb 'doping' concentrations (∼5-11 at.%), incorporated during higherature glass melting. Here we report the first n-type doping of chalcogenide glasses by ion implantation of Bi into GeTe and GaLaSO amorphous films, demonstrating rectification and photocurrent in a Bi-implanted GaLaSO device. The electrical doping effect of Bi is observed at a 100 times lower concentration than for Bi melt-doped GeCh glasses.

UR - http://www.scopus.com/inward/record.url?scp=84923274774&partnerID=8YFLogxK

U2 - 10.1038/ncomms6346

DO - 10.1038/ncomms6346

M3 - Article

AN - SCOPUS:84923274774

SN - 2041-1723

VL - 5

JO - Nature Communications

JF - Nature Communications

M1 - 5346

ER -

N-type chalcogenides by ion implantation

Abstract

Access to Document

Other files and links

Fingerprint

Cite this