Nano-tesla magnetic field magnetometry using an InGaAs-AlGaAs-GaAs 2DEG Hall sensor

N. Haned; M. Missous

doi:10.1016/S0924-4247(02)00386-2

Nano-tesla magnetic field magnetometry using an InGaAs-AlGaAs-GaAs 2DEG Hall sensor

N. Haned^*, M. Missous

^*Corresponding author for this work

EEE - Academic & Research

UMIST

Research output: Contribution to journal › Article › peer-review

Abstract

A new two dimensional electron gas (2DEG) AlGaAs-InGaAs-GaAs Hall device, which was designed and optimised with respect to the measurements of low magnetic fields is reported. This new device has been fully characterised in respect of noise and sensitivity measurement, and applied in low magnetic field detection (100 nT-100 μT). Two different DC and AC techniques have been used to detect low magnetic fields and we have been able to measure magnetic fields as low as 1 μT using DC techniques and 100 nT using AC techniques.

Original language	English
Pages (from-to)	216-222
Number of pages	7
Journal	Sensors and Actuators, A: Physical
Volume	102
Issue number	3
DOIs	https://doi.org/10.1016/S0924-4247(02)00386-2
Publication status	Published - 1 Jan 2003

Keywords

Hall sensor
Helmholtz coil
Magnetometry
Noise
pHEMT

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10.1016/S0924-4247(02)00386-2

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title = "Nano-tesla magnetic field magnetometry using an InGaAs-AlGaAs-GaAs 2DEG Hall sensor",

abstract = "A new two dimensional electron gas (2DEG) AlGaAs-InGaAs-GaAs Hall device, which was designed and optimised with respect to the measurements of low magnetic fields is reported. This new device has been fully characterised in respect of noise and sensitivity measurement, and applied in low magnetic field detection (100 nT-100 μT). Two different DC and AC techniques have been used to detect low magnetic fields and we have been able to measure magnetic fields as low as 1 μT using DC techniques and 100 nT using AC techniques.",

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author = "N. Haned and M. Missous",

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T1 - Nano-tesla magnetic field magnetometry using an InGaAs-AlGaAs-GaAs 2DEG Hall sensor

AU - Haned, N.

AU - Missous, M.

PY - 2003/1/1

Y1 - 2003/1/1

N2 - A new two dimensional electron gas (2DEG) AlGaAs-InGaAs-GaAs Hall device, which was designed and optimised with respect to the measurements of low magnetic fields is reported. This new device has been fully characterised in respect of noise and sensitivity measurement, and applied in low magnetic field detection (100 nT-100 μT). Two different DC and AC techniques have been used to detect low magnetic fields and we have been able to measure magnetic fields as low as 1 μT using DC techniques and 100 nT using AC techniques.

AB - A new two dimensional electron gas (2DEG) AlGaAs-InGaAs-GaAs Hall device, which was designed and optimised with respect to the measurements of low magnetic fields is reported. This new device has been fully characterised in respect of noise and sensitivity measurement, and applied in low magnetic field detection (100 nT-100 μT). Two different DC and AC techniques have been used to detect low magnetic fields and we have been able to measure magnetic fields as low as 1 μT using DC techniques and 100 nT using AC techniques.

KW - Hall sensor

KW - Helmholtz coil

KW - Magnetometry

KW - Noise

KW - pHEMT

UR - http://www.scopus.com/inward/record.url?scp=0037244334&partnerID=8YFLogxK

U2 - 10.1016/S0924-4247(02)00386-2

DO - 10.1016/S0924-4247(02)00386-2

M3 - Article

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SN - 0924-4247

VL - 102

SP - 216

EP - 222

JO - Sensors and Actuators, A: Physical

JF - Sensors and Actuators, A: Physical

IS - 3

ER -

Nano-tesla magnetic field magnetometry using an InGaAs-AlGaAs-GaAs 2DEG Hall sensor

Abstract

Keywords

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