Nanostructured ZnO thin films for optical, electrical, and photoelectrochemical applications from a new Zn complex

Muhammad Shahid; Mazhar Hamid; Asif A. Tahir; Muhammad Mazhar; Mohammad A. Malik; Madeleine Helliwell

doi:10.1021/ie302398m

Nanostructured ZnO thin films for optical, electrical, and photoelectrochemical applications from a new Zn complex

Muhammad Shahid^*, Mazhar Hamid, Asif A. Tahir, Muhammad Mazhar, Mohammad A. Malik, Madeleine Helliwell

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

New hexanuclear zinc complex, Zn₆(OAc)₈(μ-O) ₂(dmae)₄ (1) (OAc = acetato, dmae = N,N-dimethyl aminoethanolato) has been synthesized and characterized by its melting point, elemental analysis, Fourier transform infrared spectroscopy, atmospheric-pressure chemical-ionization mass spectrometry, thermal gravimetric analysis, and single crystal X-ray analysis. The complex (1) crystallizes in the monoclinic space group C2/c. The high solubility of complex (1) in organic solvents such as alcohol, THF, and toluene and low decomposition temperature as compared to Zn(OAc)₂ make it a promising single source candidate for the deposition of nanostructured ZnO thin films by aerosol-assisted chemical vapor deposition. Films with various nanostructures, morphology, and crystallographic orientation have been deposited by controlling the deposition temperature. The deposited films have been characterized by X-ray diffraction, scanning electron microscopy, and energy dispersive X-ray analysis. The optical characterization of ZnO films deposited on the FTO substrate show a direct band gap of 3.31 eV, and the photoelectrochemical study revealed that the photocurrent onset is at about -0.32 V, whereas no photocurrent saturation was observed. The I-V measurements designated the deposited films as ohmic semiconductors.

Original language	English
Pages (from-to)	16361-16368
Number of pages	8
Journal	Industrial and Engineering Chemistry Research
Volume	51
Issue number	50
DOIs	https://doi.org/10.1021/ie302398m
Publication status	Published - 19 Dec 2012

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10.1021/ie302398m

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@article{6a0e419d270b434fb42939e9abfbd5da,

title = "Nanostructured ZnO thin films for optical, electrical, and photoelectrochemical applications from a new Zn complex",

abstract = "New hexanuclear zinc complex, Zn6(OAc)8(μ-O) 2(dmae)4 (1) (OAc = acetato, dmae = N,N-dimethyl aminoethanolato) has been synthesized and characterized by its melting point, elemental analysis, Fourier transform infrared spectroscopy, atmospheric-pressure chemical-ionization mass spectrometry, thermal gravimetric analysis, and single crystal X-ray analysis. The complex (1) crystallizes in the monoclinic space group C2/c. The high solubility of complex (1) in organic solvents such as alcohol, THF, and toluene and low decomposition temperature as compared to Zn(OAc)2 make it a promising single source candidate for the deposition of nanostructured ZnO thin films by aerosol-assisted chemical vapor deposition. Films with various nanostructures, morphology, and crystallographic orientation have been deposited by controlling the deposition temperature. The deposited films have been characterized by X-ray diffraction, scanning electron microscopy, and energy dispersive X-ray analysis. The optical characterization of ZnO films deposited on the FTO substrate show a direct band gap of 3.31 eV, and the photoelectrochemical study revealed that the photocurrent onset is at about -0.32 V, whereas no photocurrent saturation was observed. The I-V measurements designated the deposited films as ohmic semiconductors.",

author = "Muhammad Shahid and Mazhar Hamid and Tahir, {Asif A.} and Muhammad Mazhar and Malik, {Mohammad A.} and Madeleine Helliwell",

year = "2012",

month = dec,

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doi = "10.1021/ie302398m",

language = "English",

volume = "51",

pages = "16361--16368",

journal = "Industrial and Engineering Chemistry Research",

issn = "0888-5885",

publisher = "American Chemical Society",

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T1 - Nanostructured ZnO thin films for optical, electrical, and photoelectrochemical applications from a new Zn complex

AU - Shahid, Muhammad

AU - Hamid, Mazhar

AU - Tahir, Asif A.

AU - Mazhar, Muhammad

AU - Malik, Mohammad A.

AU - Helliwell, Madeleine

PY - 2012/12/19

Y1 - 2012/12/19

N2 - New hexanuclear zinc complex, Zn6(OAc)8(μ-O) 2(dmae)4 (1) (OAc = acetato, dmae = N,N-dimethyl aminoethanolato) has been synthesized and characterized by its melting point, elemental analysis, Fourier transform infrared spectroscopy, atmospheric-pressure chemical-ionization mass spectrometry, thermal gravimetric analysis, and single crystal X-ray analysis. The complex (1) crystallizes in the monoclinic space group C2/c. The high solubility of complex (1) in organic solvents such as alcohol, THF, and toluene and low decomposition temperature as compared to Zn(OAc)2 make it a promising single source candidate for the deposition of nanostructured ZnO thin films by aerosol-assisted chemical vapor deposition. Films with various nanostructures, morphology, and crystallographic orientation have been deposited by controlling the deposition temperature. The deposited films have been characterized by X-ray diffraction, scanning electron microscopy, and energy dispersive X-ray analysis. The optical characterization of ZnO films deposited on the FTO substrate show a direct band gap of 3.31 eV, and the photoelectrochemical study revealed that the photocurrent onset is at about -0.32 V, whereas no photocurrent saturation was observed. The I-V measurements designated the deposited films as ohmic semiconductors.

AB - New hexanuclear zinc complex, Zn6(OAc)8(μ-O) 2(dmae)4 (1) (OAc = acetato, dmae = N,N-dimethyl aminoethanolato) has been synthesized and characterized by its melting point, elemental analysis, Fourier transform infrared spectroscopy, atmospheric-pressure chemical-ionization mass spectrometry, thermal gravimetric analysis, and single crystal X-ray analysis. The complex (1) crystallizes in the monoclinic space group C2/c. The high solubility of complex (1) in organic solvents such as alcohol, THF, and toluene and low decomposition temperature as compared to Zn(OAc)2 make it a promising single source candidate for the deposition of nanostructured ZnO thin films by aerosol-assisted chemical vapor deposition. Films with various nanostructures, morphology, and crystallographic orientation have been deposited by controlling the deposition temperature. The deposited films have been characterized by X-ray diffraction, scanning electron microscopy, and energy dispersive X-ray analysis. The optical characterization of ZnO films deposited on the FTO substrate show a direct band gap of 3.31 eV, and the photoelectrochemical study revealed that the photocurrent onset is at about -0.32 V, whereas no photocurrent saturation was observed. The I-V measurements designated the deposited films as ohmic semiconductors.

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Nanostructured ZnO thin films for optical, electrical, and photoelectrochemical applications from a new Zn complex

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CCDC 654596: Experimental Crystal Structure Determination

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Nanostructured ZnO thin films for optical, electrical, and photoelectrochemical applications from a new Zn complex

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CCDC 654596: Experimental Crystal Structure Determination

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