The negative magnetoresistance effect of 2D hot electrons in GaAs-AlxGa1-xAs heterastructures was observed. As the electric field rose, the negative magnetoresistance effect became more obvious, and the amplitude of Δσ/σ (O) for high mobility samples could reach 20%. It was indicated from a simple theoretical analysis that the experimental results were explained by a model based on an increase in the electron energy relaxation rate, leading to 2D hot electron cooling, in a weak magnetic field. As for low mobility samples, the change of the amplitude decreased. It was due to hot electron cooling by magnet.
|Number of pages||6|
|Journal||Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors|
|Publication status||Published - 1994|