TY - JOUR
T1 - Negative magnetoresistance effect of 2D hot electrons in GaAs-AlxGa1-xAs heterostructures
AU - Cheng, Wenchao
AU - Zhu, Jingbing
AU - Li, Yuexia
AU - Song, Aimin
AU - Zheng, Houzhi
PY - 1994
Y1 - 1994
N2 - The negative magnetoresistance effect of 2D hot electrons in GaAs-AlxGa1-xAs heterastructures was observed. As the electric field rose, the negative magnetoresistance effect became more obvious, and the amplitude of Δσ/σ (O) for high mobility samples could reach 20%. It was indicated from a simple theoretical analysis that the experimental results were explained by a model based on an increase in the electron energy relaxation rate, leading to 2D hot electron cooling, in a weak magnetic field. As for low mobility samples, the change of the amplitude decreased. It was due to hot electron cooling by magnet.
AB - The negative magnetoresistance effect of 2D hot electrons in GaAs-AlxGa1-xAs heterastructures was observed. As the electric field rose, the negative magnetoresistance effect became more obvious, and the amplitude of Δσ/σ (O) for high mobility samples could reach 20%. It was indicated from a simple theoretical analysis that the experimental results were explained by a model based on an increase in the electron energy relaxation rate, leading to 2D hot electron cooling, in a weak magnetic field. As for low mobility samples, the change of the amplitude decreased. It was due to hot electron cooling by magnet.
UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-0028482220&partnerID=MN8TOARS
M3 - Article
SN - 0253-4177
VL - 15
SP - 577
EP - 582
JO - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
JF - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
IS - 8
ER -