Negative magnetoresistance effect of 2D hot electrons in GaAs-AlxGa1-xAs heterostructures

Wenchao Cheng, Jingbing Zhu, Yuexia Li, Aimin Song, Houzhi Zheng

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Abstract

The negative magnetoresistance effect of 2D hot electrons in GaAs-AlxGa1-xAs heterastructures was observed. As the electric field rose, the negative magnetoresistance effect became more obvious, and the amplitude of Δσ/σ (O) for high mobility samples could reach 20%. It was indicated from a simple theoretical analysis that the experimental results were explained by a model based on an increase in the electron energy relaxation rate, leading to 2D hot electron cooling, in a weak magnetic field. As for low mobility samples, the change of the amplitude decreased. It was due to hot electron cooling by magnet.
Original languageUndefined
Pages (from-to)577-582
Number of pages6
JournalPan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Volume15
Issue number8
Publication statusPublished - 1994

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