New donor doping sources for molecular beam epitaxy of AIGaSb and AIGaAs

L. Dobaczewski; M. Missous; K. E. Singer; Z. R. Zytkiewicz

New donor doping sources for molecular beam epitaxy of AIGaSb and AIGaAs

L. Dobaczewski, M. Missous, K. E. Singer, Z. R. Zytkiewicz

EEE - Academic & Research

Research output: Contribution to journal › Article › peer-review

Abstract

Results obtained for the first time using Ga₂S₃ and Ga₂Se₃ compounds as sources of donor elements for the molecular beam epitaxy of Al_xGa_1-xSb (0 ≤ x ≤ 1 ) and Al_xGa_1-xAs (0 ≤ x ≤ 0·4) are reported. In GaAs, free electron concentrations obtained when incorporating the donors from these sources can be readily controlled up to a maximum of 5 × 10¹⁸ cm^-3. For Al_xGa_1-xSb it was possible to compensate the high concentration of native acceptors and obtain n type conductivity over the full composition range of the alloy. In Al_xGa_1-xSb donor related defects (DX centres) were observed.

Original language	English
Pages (from-to)	193-195
Number of pages	3
Journal	Materials Science and Technology
Volume	12
Issue number	2
Publication status	Published - 1 Feb 1996

Cite this

@article{842f27f7b03a4d5f9f6525797ffaa8ad,

title = "New donor doping sources for molecular beam epitaxy of AIGaSb and AIGaAs",

abstract = "Results obtained for the first time using Ga2S3 and Ga2Se3 compounds as sources of donor elements for the molecular beam epitaxy of AlxGa1-xSb (0 ≤ x ≤ 1 ) and AlxGa1-xAs (0 ≤ x ≤ 0·4) are reported. In GaAs, free electron concentrations obtained when incorporating the donors from these sources can be readily controlled up to a maximum of 5 × 1018 cm-3. For AlxGa1-xSb it was possible to compensate the high concentration of native acceptors and obtain n type conductivity over the full composition range of the alloy. In AlxGa1-xSb donor related defects (DX centres) were observed.",

author = "L. Dobaczewski and M. Missous and Singer, {K. E.} and Zytkiewicz, {Z. R.}",

year = "1996",

month = feb,

day = "1",

language = "English",

volume = "12",

pages = "193--195",

journal = "Materials Science and Technology",

issn = "0267-0836",

publisher = "Taylor & Francis",

number = "2",

}

TY - JOUR

T1 - New donor doping sources for molecular beam epitaxy of AIGaSb and AIGaAs

AU - Dobaczewski, L.

AU - Missous, M.

AU - Singer, K. E.

AU - Zytkiewicz, Z. R.

PY - 1996/2/1

Y1 - 1996/2/1

N2 - Results obtained for the first time using Ga2S3 and Ga2Se3 compounds as sources of donor elements for the molecular beam epitaxy of AlxGa1-xSb (0 ≤ x ≤ 1 ) and AlxGa1-xAs (0 ≤ x ≤ 0·4) are reported. In GaAs, free electron concentrations obtained when incorporating the donors from these sources can be readily controlled up to a maximum of 5 × 1018 cm-3. For AlxGa1-xSb it was possible to compensate the high concentration of native acceptors and obtain n type conductivity over the full composition range of the alloy. In AlxGa1-xSb donor related defects (DX centres) were observed.

AB - Results obtained for the first time using Ga2S3 and Ga2Se3 compounds as sources of donor elements for the molecular beam epitaxy of AlxGa1-xSb (0 ≤ x ≤ 1 ) and AlxGa1-xAs (0 ≤ x ≤ 0·4) are reported. In GaAs, free electron concentrations obtained when incorporating the donors from these sources can be readily controlled up to a maximum of 5 × 1018 cm-3. For AlxGa1-xSb it was possible to compensate the high concentration of native acceptors and obtain n type conductivity over the full composition range of the alloy. In AlxGa1-xSb donor related defects (DX centres) were observed.

UR - http://www.scopus.com/inward/record.url?scp=2842608104&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:2842608104

SN - 0267-0836

VL - 12

SP - 193

EP - 195

JO - Materials Science and Technology

JF - Materials Science and Technology

IS - 2

ER -

New donor doping sources for molecular beam epitaxy of AIGaSb and AIGaAs

Abstract

Other files and links

Fingerprint

Cite this