Noise enhanced THz rectification tuned by geometry in planar asymmetric nanodiodes

I. Iniguez-de-la-Torre, H. Rodilla, J. Mateos, D. Pardo, A.M. Song, T. González

Research output: Chapter in Book/Conference proceedingConference contributionpeer-review

Abstract

In this work we explore a high frequency collective phenomenon present in an asymmetric nanodiode. Charge fluctuations in the space‐charge regions around the channel become visible in the noise spectra at a characteristic frequency. Though dealing with a specific noise mechanism, by virtue of the particular geometry of the device, this phenomenon enhances the DC response of the diode to AC signals, originating a THz resonance at a frequency that can be tuned by the geometry. Taking place at room temperature, this effect can be exploited to design somewhat frequency‐selective detectors in the THz domain. The use of different narrow bandgap materials (like InGaAs, InAs or InSb) in the channel and the influence of the operation temperature are analyzed in order to improve the resonance characteristics.
Original languageUndefined
Title of host publicationAIP Conference Proceedings
Pages229–232
Number of pages4
DOIs
Publication statusPublished - 2009

Cite this