Non linear piezoelectricity in zincblende GaAs and InAs semiconductors

G. Tse; J. Pal; R. Garg; V. Haxha; M. A. Migliorato

doi:10.1109/NUSOD.2012.6316527

Non linear piezoelectricity in zincblende GaAs and InAs semiconductors

G. Tse, J. Pal, R. Garg, V. Haxha, M. A. Migliorato

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We investigate the strain dependence of piezoelectric effect, both linear and non linear, in zincblende GaAs and InAs semiconductors. We expanded the polarization in terms of the ionic and dipole charges, internal displacement and the exploited the ab-initio Density Functional Theory (DFT) to evaluate the dependence of all quantities on the strain tensor. By this detailed study of the non linear piezoelectric effect, we report that even third order effects are significant. © 2012 IEEE.

Original language	English
Title of host publication	Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD\|Proc. Int. Conf. Numer. Simul. Optoelectron. Devices, NUSOD
Publisher	IEEE
Pages	85-86
Number of pages	1
ISBN (Print)	9781467316040
DOIs	https://doi.org/10.1109/NUSOD.2012.6316527
Publication status	Published - 2012
Event	12th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2012 - Shanghai Duration: 1 Jul 2012 → …

Conference

Conference	12th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2012
City	Shanghai
Period	1/07/12 → …

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10.1109/NUSOD.2012.6316527

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@inproceedings{e0bb0fc82dc645a79574337c08d54eef,

title = "Non linear piezoelectricity in zincblende GaAs and InAs semiconductors",

abstract = "We investigate the strain dependence of piezoelectric effect, both linear and non linear, in zincblende GaAs and InAs semiconductors. We expanded the polarization in terms of the ionic and dipole charges, internal displacement and the exploited the ab-initio Density Functional Theory (DFT) to evaluate the dependence of all quantities on the strain tensor. By this detailed study of the non linear piezoelectric effect, we report that even third order effects are significant. {\textcopyright} 2012 IEEE.",

author = "G. Tse and J. Pal and R. Garg and V. Haxha and Migliorato, {M. A.}",

year = "2012",

doi = "10.1109/NUSOD.2012.6316527",

language = "English",

isbn = "9781467316040",

pages = "85--86",

booktitle = "Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD|Proc. Int. Conf. Numer. Simul. Optoelectron. Devices, NUSOD",

publisher = "IEEE",

address = "United States",

note = "12th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2012 ; Conference date: 01-07-2012",

}

Tse, G, Pal, J, Garg, R, Haxha, V & Migliorato, MA 2012, Non linear piezoelectricity in zincblende GaAs and InAs semiconductors. in Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD|Proc. Int. Conf. Numer. Simul. Optoelectron. Devices, NUSOD. IEEE, pp. 85-86, 12th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2012, Shanghai, 1/07/12. https://doi.org/10.1109/NUSOD.2012.6316527

Non linear piezoelectricity in zincblende GaAs and InAs semiconductors. / Tse, G.; Pal, J.; Garg, R. et al.
Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD|Proc. Int. Conf. Numer. Simul. Optoelectron. Devices, NUSOD. IEEE, 2012. p. 85-86.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Non linear piezoelectricity in zincblende GaAs and InAs semiconductors

AU - Tse, G.

AU - Pal, J.

AU - Garg, R.

AU - Haxha, V.

AU - Migliorato, M. A.

PY - 2012

Y1 - 2012

N2 - We investigate the strain dependence of piezoelectric effect, both linear and non linear, in zincblende GaAs and InAs semiconductors. We expanded the polarization in terms of the ionic and dipole charges, internal displacement and the exploited the ab-initio Density Functional Theory (DFT) to evaluate the dependence of all quantities on the strain tensor. By this detailed study of the non linear piezoelectric effect, we report that even third order effects are significant. © 2012 IEEE.

AB - We investigate the strain dependence of piezoelectric effect, both linear and non linear, in zincblende GaAs and InAs semiconductors. We expanded the polarization in terms of the ionic and dipole charges, internal displacement and the exploited the ab-initio Density Functional Theory (DFT) to evaluate the dependence of all quantities on the strain tensor. By this detailed study of the non linear piezoelectric effect, we report that even third order effects are significant. © 2012 IEEE.

U2 - 10.1109/NUSOD.2012.6316527

DO - 10.1109/NUSOD.2012.6316527

M3 - Conference contribution

SN - 9781467316040

SP - 85

EP - 86

BT - Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD|Proc. Int. Conf. Numer. Simul. Optoelectron. Devices, NUSOD

PB - IEEE

T2 - 12th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2012

Y2 - 1 July 2012

ER -

Non linear piezoelectricity in zincblende GaAs and InAs semiconductors

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