Noncontact measurement of charge carrier lifetime and mobility in GaN nanowires

Patrick Parkinson; Christopher Dodson; Hannah J Joyce; Kris A Bertness; Norman A Sanford; Laura M Herz; Michael B Johnston

doi:10.1021/nl301898m

Noncontact measurement of charge carrier lifetime and mobility in GaN nanowires

Patrick Parkinson, Christopher Dodson, Hannah J Joyce, Kris A Bertness, Norman A Sanford, Laura M Herz, Michael B Johnston

Research output: Contribution to journal › Article › peer-review

Abstract

The first noncontact photoconductivity measurements of gallium nitride nanowires (NWs) are presented, revealing a high crystallographic and optoelectronic quality achieved by use of catalyst-free molecular beam epitaxy. In comparison with bulk material, the NWs exhibit a long conductivity lifetime (>2 ns) and a high mobility (820 ?? 120 cm(2)/(V s)). This is due to the weak influence of surface traps with respect to other III-V semiconducting NWs and to the favorable crystalline structure of the NWs achieved via strain-relieved growth.

Original language	English
Pages (from-to)	4600-4604
Number of pages	5
Journal	Nano Letters
Volume	12
Issue number	9
DOIs	https://doi.org/10.1021/nl301898m
Publication status	Published - 27 Aug 2012

Keywords

terahertz

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abstract = "The first noncontact photoconductivity measurements of gallium nitride nanowires (NWs) are presented, revealing a high crystallographic and optoelectronic quality achieved by use of catalyst-free molecular beam epitaxy. In comparison with bulk material, the NWs exhibit a long conductivity lifetime (>2 ns) and a high mobility (820 ?? 120 cm(2)/(V s)). This is due to the weak influence of surface traps with respect to other III-V semiconducting NWs and to the favorable crystalline structure of the NWs achieved via strain-relieved growth.",

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author = "Patrick Parkinson and Christopher Dodson and Joyce, {Hannah J} and Bertness, {Kris A} and Sanford, {Norman A} and Herz, {Laura M} and Johnston, {Michael B}",

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doi = "10.1021/nl301898m",

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journal = "Nano Letters",

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T1 - Noncontact measurement of charge carrier lifetime and mobility in GaN nanowires

AU - Parkinson, Patrick

AU - Dodson, Christopher

AU - Joyce, Hannah J

AU - Bertness, Kris A

AU - Sanford, Norman A

AU - Herz, Laura M

AU - Johnston, Michael B

PY - 2012/8/27

Y1 - 2012/8/27

N2 - The first noncontact photoconductivity measurements of gallium nitride nanowires (NWs) are presented, revealing a high crystallographic and optoelectronic quality achieved by use of catalyst-free molecular beam epitaxy. In comparison with bulk material, the NWs exhibit a long conductivity lifetime (>2 ns) and a high mobility (820 ?? 120 cm(2)/(V s)). This is due to the weak influence of surface traps with respect to other III-V semiconducting NWs and to the favorable crystalline structure of the NWs achieved via strain-relieved growth.

AB - The first noncontact photoconductivity measurements of gallium nitride nanowires (NWs) are presented, revealing a high crystallographic and optoelectronic quality achieved by use of catalyst-free molecular beam epitaxy. In comparison with bulk material, the NWs exhibit a long conductivity lifetime (>2 ns) and a high mobility (820 ?? 120 cm(2)/(V s)). This is due to the weak influence of surface traps with respect to other III-V semiconducting NWs and to the favorable crystalline structure of the NWs achieved via strain-relieved growth.

KW - terahertz

U2 - 10.1021/nl301898m

DO - 10.1021/nl301898m

M3 - Article

SN - 1530-6984

VL - 12

SP - 4600

EP - 4604

JO - Nano Letters

JF - Nano Letters

IS - 9

ER -

Noncontact measurement of charge carrier lifetime and mobility in GaN nanowires

Abstract

Keywords

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