Nonlinear electron transport in normally pinched-off quantum wire

K. S. Novoselov, Yu V. Dubrovskii, V. A. Sablikov, D. Yu Ivanov, E. E. Vdovin, Yu N. Khanin, V. A. Tulin, D. Esteve, S. Beaumont

    Research output: Contribution to journalArticlepeer-review


    Nonlinear electron transport in normally pinched-off quantum wires was studied. The wires were fabricated from AlGaAs/GaAs heterostructures with high-mobility two-dimensional electron gas by electron beam lithography and following wet etching. At certain critical source-drain voltage the samples exhibited a step rise of the conductance. The differential conductance of the open wires was noticeably lower than e2/h as far as only part of the source-drain voltage dropped between source contact and saddle point of the potential relief along the wire. The latter limited the electron flow injected to the wire. At high enough source-drain voltages the decrease of the differential conductance due to the real space transfer of electrons from the wire in GaAs to the doped AlGaAs layer was found. In this regime the sign of the differential magnetocondnctance was changed with reversing the direction of the current in the wire or the magnetic field, when the magnetic field lies in the heterostructure plane and is directed perpendicular to the current. The dependence of the differential conductance on the magnetic field and its direction indicated that the real space transfer events were mainly mediated by the interface scattering.
    Original languageEnglish
    Pages (from-to)660-666
    Number of pages6
    Issue number6
    Publication statusPublished - 11 Dec 2000


    Dive into the research topics of 'Nonlinear electron transport in normally pinched-off quantum wire'. Together they form a unique fingerprint.

    Cite this