Nonlinearity measurement and analysis of 0.25 µm GaN HEMT over frequency and temperature using two-tone intermodulation distortion

Mohammad Abdul Alim; Ali Rezazadeh; Christophe Gaquiere; Mayahsa Mohammed Ali Abdul Hadi; Yongjian Zhang; Norshakila Haris; Peter Kyabaggu

doi:10.1109/EuMC.2015.7345842

Nonlinearity measurement and analysis of 0.25 µm GaN HEMT over frequency and temperature using two-tone intermodulation distortion

Mohammad Abdul Alim, Ali Rezazadeh, Christophe Gaquiere, Mayahsa Mohammed Ali Abdul Hadi, Yongjian Zhang, Norshakila Haris, Peter Kyabaggu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Linear and nonlinear characteristics of 0.25 μmAlGaN/GaN HEMT grown on SiC substrate have been studied asa function of biasing, input power, frequency and temperatureusing a two-tone intermodulation distortion measurementtechnique for the first time. The results indicate a significantmodification on the output IMD power. An empirical analyticalmodel has been developed and good agreement was shownbetween the measured data with the simulation results. Theanalysis of GaN HEMT presented can be utilized forperformance enhancement of the design optimization ofadvanced GaN based MMIC’s operating at high temperature.

Original language	English
Title of host publication	Proceedings of the 45th European Microwave Conference
Editors	Serge Verdeyme
Place of Publication	USA
Publisher	IEEE
Pages	630-633
Number of pages	4
Volume	45
ISBN (Print)	978-2-87487-039-2
DOIs	https://doi.org/10.1109/EuMC.2015.7345842
Publication status	Published - 9 Sept 2015
Event	45th European Microwave Conference - Paris, France Duration: 7 Sept 2015 → 9 Sept 2015 http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7345815&isnumber=7345669

Conference

Conference	45th European Microwave Conference
City	Paris, France
Period	7/09/15 → 9/09/15
Internet address	http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7345815&isnumber=7345669

Keywords

AlGaN/GaN/SiC HEMT, two-tone intermodulation

Access to Document

10.1109/EuMC.2015.7345842

Cite this

Alim, M. A., Rezazadeh, A., Gaquiere, C., Mohammed Ali Abdul Hadi, M., Zhang, Y., Haris, N., & Kyabaggu, P. (2015). Nonlinearity measurement and analysis of 0.25 µm GaN HEMT over frequency and temperature using two-tone intermodulation distortion. In S. Verdeyme (Ed.), Proceedings of the 45th European Microwave Conference (Vol. 45, pp. 630-633). IEEE. https://doi.org/10.1109/EuMC.2015.7345842

@inproceedings{708aab438d7f42f28fcb15b90a9b2564,

title = "Nonlinearity measurement and analysis of 0.25 µm GaN HEMT over frequency and temperature using two-tone intermodulation distortion",

abstract = "Linear and nonlinear characteristics of 0.25 μmAlGaN/GaN HEMT grown on SiC substrate have been studied asa function of biasing, input power, frequency and temperatureusing a two-tone intermodulation distortion measurementtechnique for the first time. The results indicate a significantmodification on the output IMD power. An empirical analyticalmodel has been developed and good agreement was shownbetween the measured data with the simulation results. Theanalysis of GaN HEMT presented can be utilized forperformance enhancement of the design optimization ofadvanced GaN based MMIC{\textquoteright}s operating at high temperature.",

keywords = "AlGaN/GaN/SiC HEMT, two-tone intermodulation",

author = "Alim, {Mohammad Abdul} and Ali Rezazadeh and Christophe Gaquiere and {Mohammed Ali Abdul Hadi}, Mayahsa and Yongjian Zhang and Norshakila Haris and Peter Kyabaggu",

note = "This work was in collaboration with Prof Christophe Gaquiere, University of Lille, IEMN,France. All the microwave transistors were designed and fabricated at this venue.; 45th European Microwave Conference ; Conference date: 07-09-2015 Through 09-09-2015",

year = "2015",

month = sep,

day = "9",

doi = "10.1109/EuMC.2015.7345842",

language = "English",

isbn = "978-2-87487-039-2",

volume = "45",

pages = "630--633",

editor = "Serge Verdeyme",

booktitle = "Proceedings of the 45th European Microwave Conference",

publisher = "IEEE",

address = "United States",

url = "http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7345815&isnumber=7345669",

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Alim, MA, Rezazadeh, A, Gaquiere, C, Mohammed Ali Abdul Hadi, M, Zhang, Y, Haris, N & Kyabaggu, P 2015, Nonlinearity measurement and analysis of 0.25 µm GaN HEMT over frequency and temperature using two-tone intermodulation distortion. in S Verdeyme (ed.), Proceedings of the 45th European Microwave Conference. vol. 45, IEEE, USA, pp. 630-633, 45th European Microwave Conference, Paris, France, 7/09/15. https://doi.org/10.1109/EuMC.2015.7345842

Nonlinearity measurement and analysis of 0.25 µm GaN HEMT over frequency and temperature using two-tone intermodulation distortion. / Alim, Mohammad Abdul; Rezazadeh, Ali; Gaquiere, Christophe et al.
Proceedings of the 45th European Microwave Conference. ed. / Serge Verdeyme. Vol. 45 USA: IEEE, 2015. p. 630-633.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Nonlinearity measurement and analysis of 0.25 µm GaN HEMT over frequency and temperature using two-tone intermodulation distortion

AU - Alim, Mohammad Abdul

AU - Rezazadeh, Ali

AU - Gaquiere, Christophe

AU - Mohammed Ali Abdul Hadi, Mayahsa

AU - Zhang, Yongjian

AU - Haris, Norshakila

AU - Kyabaggu, Peter

N1 - This work was in collaboration with Prof Christophe Gaquiere, University of Lille, IEMN,France. All the microwave transistors were designed and fabricated at this venue.

PY - 2015/9/9

Y1 - 2015/9/9

N2 - Linear and nonlinear characteristics of 0.25 μmAlGaN/GaN HEMT grown on SiC substrate have been studied asa function of biasing, input power, frequency and temperatureusing a two-tone intermodulation distortion measurementtechnique for the first time. The results indicate a significantmodification on the output IMD power. An empirical analyticalmodel has been developed and good agreement was shownbetween the measured data with the simulation results. Theanalysis of GaN HEMT presented can be utilized forperformance enhancement of the design optimization ofadvanced GaN based MMIC’s operating at high temperature.

AB - Linear and nonlinear characteristics of 0.25 μmAlGaN/GaN HEMT grown on SiC substrate have been studied asa function of biasing, input power, frequency and temperatureusing a two-tone intermodulation distortion measurementtechnique for the first time. The results indicate a significantmodification on the output IMD power. An empirical analyticalmodel has been developed and good agreement was shownbetween the measured data with the simulation results. Theanalysis of GaN HEMT presented can be utilized forperformance enhancement of the design optimization ofadvanced GaN based MMIC’s operating at high temperature.

KW - AlGaN/GaN/SiC HEMT, two-tone intermodulation

U2 - 10.1109/EuMC.2015.7345842

DO - 10.1109/EuMC.2015.7345842

M3 - Conference contribution

SN - 978-2-87487-039-2

VL - 45

SP - 630

EP - 633

BT - Proceedings of the 45th European Microwave Conference

A2 - Verdeyme, Serge

PB - IEEE

CY - USA

T2 - 45th European Microwave Conference

Y2 - 7 September 2015 through 9 September 2015

ER -

Nonlinearity measurement and analysis of 0.25 µm GaN HEMT over frequency and temperature using two-tone intermodulation distortion

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