Nonvolatile switching in graphene field-effect devices

Tim J. Echtermeyer; Max C. Lemme; Matthias Baus; Barthomäus N. Szafranek; Andre K. Geim; Heinrich Kurz

doi:10.1109/LED.2008.2001179

Nonvolatile switching in graphene field-effect devices

Tim J. Echtermeyer, Max C. Lemme, Matthias Baus, Barthomäus N. Szafranek, Andre K. Geim, Heinrich Kurz

Research output: Contribution to journal › Article › peer-review

Abstract

The absence of a band gap in graphene restricts its straightforward application as a channel material in fieldeffect transistors. In this letter, we report on a new approach to engineer a band gap in graphene field-effect devices (FEDs) by controlled structural modification of the graphene channel itself. The conductance in the FEDs is switched between a conductive "on-state" and an insulating "off-state" with more than six orders of magnitude difference in conductance. Above a critical value of an electric field applied to the FED gate under certain environmental conditions, a chemical modification takes place to form insulating graphene derivatives. The effect can be reversed by electrical fields of opposite polarity or short current pulses to recover the initial state. These reversible switches could potentially be applied to nonvolatile memories and novel neuromorphic processing concepts. © 2008 IEEE.

Original language	English
Pages (from-to)	952-954
Number of pages	2
Journal	IEEE Electron Device Letters
Volume	29
Issue number	8
DOIs	https://doi.org/10.1109/LED.2008.2001179
Publication status	Published - Aug 2008

Keywords

Field-effect transistor (FET)
Graphene
Memory
MOSFET
Nonvolatile
Switch

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10.1109/LED.2008.2001179

Cite this

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abstract = "The absence of a band gap in graphene restricts its straightforward application as a channel material in fieldeffect transistors. In this letter, we report on a new approach to engineer a band gap in graphene field-effect devices (FEDs) by controlled structural modification of the graphene channel itself. The conductance in the FEDs is switched between a conductive {"}on-state{"} and an insulating {"}off-state{"} with more than six orders of magnitude difference in conductance. Above a critical value of an electric field applied to the FED gate under certain environmental conditions, a chemical modification takes place to form insulating graphene derivatives. The effect can be reversed by electrical fields of opposite polarity or short current pulses to recover the initial state. These reversible switches could potentially be applied to nonvolatile memories and novel neuromorphic processing concepts. {\textcopyright} 2008 IEEE.",

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AU - Echtermeyer, Tim J.

AU - Lemme, Max C.

AU - Baus, Matthias

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AU - Geim, Andre K.

AU - Kurz, Heinrich

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AB - The absence of a band gap in graphene restricts its straightforward application as a channel material in fieldeffect transistors. In this letter, we report on a new approach to engineer a band gap in graphene field-effect devices (FEDs) by controlled structural modification of the graphene channel itself. The conductance in the FEDs is switched between a conductive "on-state" and an insulating "off-state" with more than six orders of magnitude difference in conductance. Above a critical value of an electric field applied to the FED gate under certain environmental conditions, a chemical modification takes place to form insulating graphene derivatives. The effect can be reversed by electrical fields of opposite polarity or short current pulses to recover the initial state. These reversible switches could potentially be applied to nonvolatile memories and novel neuromorphic processing concepts. © 2008 IEEE.

KW - Field-effect transistor (FET)

KW - Graphene

KW - Memory

KW - MOSFET

KW - Nonvolatile

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Nonvolatile switching in graphene field-effect devices

Abstract

Keywords

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